公开(公告)号：JPH10209297A

公开(公告)日：1998-08-07

申请号：JP36017697

申请日：1997-12-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHITTIPEDDI SAILESH ,  COCHRAN WILLIAM THOMAS ,  KNIGHT STEPHEN

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To form a pair of walls free from step-difference. SOLUTION: A first material layer 17 is deposited on the surface of a substrate 13. First type dopant species are injected 191 through the surface of the substrate 13. A second material layer is deposited on a pad oxide layer 15, and the first material layer 17 is eliminated. Second type dopant species are injected 192 through the eliminated region.

公开(公告)号：JPH09186168A

公开(公告)日：1997-07-15

申请号：JP32632296

申请日：1996-12-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHITTIPEDDI SAILESH ,  KNIGHT STEPHEN

IPC: H01L21/324

Abstract: PROBLEM TO BE SOLVED: To uniformly and more satisfactorily heat treat a wafer having a partly formed integrated circuit by coating the lover side of the wafer with a heat absorptive material and heating it with leaving specified distance from a heating surface. SOLUTION: The lower side of a wafer having a partly formed integrated circuit at the upper side 13 with a heat absorptive material and heated with leaving specified distance d from a heating surface 19. The bottom surface (lower side) of a Si wafer 11 is, e.g. coated with a heat absorptive material 15 such as C and held with a holding material 17 with leaving specified distance d from a heating surface 19 while the surface (upper side) 13 is directed up. The heating surface 19 is heated by the resistive heating of a hot plate or the like or by a lamp or hot gas to hold it at a fixed high temp.