公开(公告)号：JP2000307173A

公开(公告)日：2000-11-02

申请号：JP2000090013

申请日：2000-03-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KATZ HOWARD EDAN ,  LI WENJIE ,  LOVINGER ANDREW J

IPC: H01L51/05 ,  H01L29/786 ,  H01L51/30 ,  H01L51/40 ,  H01L51/00

Abstract: PROBLEM TO BE SOLVED: To realize a device which contains an N-channel semiconductor material that is stable in the air, transparent to visible rays, and indicates a specific field-effect electron mobility by adding condensed ring tetracarboxylic acid diamide compound to a thin film. SOLUTION: An N-channel semiconductor thin film contains a condensed ring tetracarboxylic acid diamide compound and indicates field effect electron mobility larger than 0.001 cm2/Vs. Naphathalene 1,4,5,8-tetracarboxylic acid diamide can be used as the above compound. This compound can be dissolved well into an ordinary organic solvent, and an active semiconductor thin film can be solution-deposited. The compound can be made very volatile so as to be easily vapor-deposited if necessary. Even if the compound is operated in the air, it indicates a desirably high mobility of an N-channel and a preferable ON/OFF ratio and is comparatively transparent to visible rays.

公开(公告)号：JP2000307172A

公开(公告)日：2000-11-02

申请号：JP2000090010

申请日：2000-03-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KATZ HOWARD EDAN ,  LI WENJIE

IPC: H01L21/368 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing process of an organic circuit. SOLUTION: An organic semiconductor thin film is formed, for instance, through a solution forming manner where a solution which contains an organic semiconductor material and solvent is fed on a board 18, and the solvent is evaporated for the formation of an organic semiconductor thin film. The surface characteristics of a board, organic semiconductor material, and process parameters are so selected as to form required nucleuses and to grow crystals. The obtained organic semiconductor thin film includes a continuous region whose area is larger than 1 cm2 and where carrier mobility is comparatively high or about 10-4 cm2V-1s-1 at a room temperature.