DEVICE CONTAINING N-CHANNEL SEMICONDUCTOR MATERIAL

    公开(公告)号:JP2000307173A

    公开(公告)日:2000-11-02

    申请号:JP2000090013

    申请日:2000-03-29

    Abstract: PROBLEM TO BE SOLVED: To realize a device which contains an N-channel semiconductor material that is stable in the air, transparent to visible rays, and indicates a specific field-effect electron mobility by adding condensed ring tetracarboxylic acid diamide compound to a thin film. SOLUTION: An N-channel semiconductor thin film contains a condensed ring tetracarboxylic acid diamide compound and indicates field effect electron mobility larger than 0.001 cm2/Vs. Naphathalene 1,4,5,8-tetracarboxylic acid diamide can be used as the above compound. This compound can be dissolved well into an ordinary organic solvent, and an active semiconductor thin film can be solution-deposited. The compound can be made very volatile so as to be easily vapor-deposited if necessary. Even if the compound is operated in the air, it indicates a desirably high mobility of an N-channel and a preferable ON/OFF ratio and is comparatively transparent to visible rays.

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