公开(公告)号：JP2000353699A

公开(公告)日：2000-12-19

申请号：JP2000142467

申请日：2000-05-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HAAS JEFFREY KENNETH ,  MCKEE DANIEL JOSEPH ,  PEARCE CHARLES WALTER

IPC: H01L21/316 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088

Abstract: PROBLEM TO BE SOLVED: To form a sufficient oxide layer, with a comparatively simplified process by injecting fluorine into a silicon lattice and thereafter forming a silicon oxide region through adoption of oxidizing process in the dry oxidizing process or wet oxidizing process. SOLUTION: A substrate 100 has a patterning layer 110, and the patterning layer 110 preferably forms, within the substrate 100, a region where a field oxide region 120 is formed with a photoresist mask. When fluorine indicated with the arrow mark 115 is injected to a substrate 100, fluorine atoms form a fluorine injection region 112 within the surface of the substrate 100. The preferable fluorine atom amount injected to the substrate 100 is about 1×1011 to 5×1016 atoms/cm2 and preferred energy injection amount is 1 keV to 1 MeV. After the patterning layer 110 is removed, the fluorine injecting region 112 of the substrate 100 is processed with the oxidizing processing to cause both the field oxide region 120 and a gate oxide layer 125 to grow.

公开(公告)号：JP2000357689A

公开(公告)日：2000-12-26

申请号：JP2000142468

申请日：2000-05-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HAAS JEFFREY KENNETH ,  MCKEE DANIEL JOSEPH ,  PEARCE CHARLES WALTER

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To simplify a process by a method wherein fluorine is injected to a layer of materials to form an oxide region. SOLUTION: A substrate 100 has a patterning layer 110, and preferably a region where a field oxide region 120 is formed is formed in the substrate 100 by means of a photoresist mask. Fluorine is injected into a surface of the substrate 100, and preferably fluorine atoms are injected into the surface of the substrate 100 by ions injection, to form a fluorine injection region 112. The patterning layer 110 is eliminated, and the fluorine injection region 112 of the substrate 100 is thereafter oxidized, thereby growing the field oxide region and a gate oxide layer. A thickness of the field oxide region is in the range of 1000 Å and 10,000 Å. A thickness of the gate oxide layer is in the range of 20 Å and 1000 Å, and preferably in the range of 50 Å and 500 Å. An amount of fluorine of the field oxide region and the gate oxide layer is preferably in the range of 5*1010 atoms/cm2 and 7*1013 atoms/cm2.