公开(公告)号：JP2001177090A

公开(公告)日：2001-06-29

申请号：JP2000328522

申请日：2000-10-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRITTAIN CHARLES KANE ,  MICHAEL A ROOFARII ,  MA YI

IPC: H01L29/78 ,  H01L21/335 ,  H01L21/336 ,  H01L29/49

Abstract: PROBLEM TO BE SOLVED: To provide a multilayer spacer close to the gate of FET structure. SOLUTION: Multilayer spacers 306 and 307 are provided with a low k material layer 306 for reducing floating capacitance, and a material layer 307 for indicating etching selectivity for a substrate and an insulation oxide. The method allows the overetching of active and insulation regions to be avoided.