QUANTUM WELL LAYER STRUCTURE
    1.
    发明专利

    公开(公告)号:JP2003115643A

    公开(公告)日:2003-04-18

    申请号:JP2002222096

    申请日:2002-07-30

    Abstract: PROBLEM TO BE SOLVED: To provide a method for removing uncertainty between relative values of energy levels even when an intrinsic internal electric fields can be present to generate an optical device based on a coupled quantum well. SOLUTION: The quantum well layer structure comprises a plurality of quantum well layers coupled by barrier layers. In this structure, at least one of a piezoelectric field and a pyroelectric field is formed, and the quantum well structure is doped with a Fermi-energy level filled between the base state and the excited state of the coupled quantum well layer.

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