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    PRODUCT HAVING QUANTUM CASCADE LASER
    1.
    发明专利
    PRODUCT HAVING QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH104242A

    公开(公告)日：1998-01-06

    申请号：JP6578297

    申请日：1997-03-19

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  JEROME FAIST ,  HUTCHINSON ALBERT LEE ,  CARLO SIRTORI ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/34 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To enable conducting a laser oscillation operation at high temperature by a method wherein an active region is comprised of a wave function amplitude increasing structure, with which the amplitude of wave function is increased on the barrier layer arranged between a quantum well and an I/R region. SOLUTION: The first region comprises a quantum well(QW), the first one has the second and the third energy state of charge carrier. The third energy state is higher than the second energy state, and the second and third wave functions of charge carrier is accomplished. The wave function is selected in such a manner that electrons undergo the emission transition from the third energy state to the second energy state is received while a QC laser is in operation. The first active region has a wave function increasing structure with which the amplitude of the third wave function in the first barrier arranged between the first QW and the I/R region on the upstream side of directly above the first active region is increased. As a result, a QC laser, with which a laser can be oscillated at high temperature, can be obtained.

    DEVICE HAVING QUANTUM CASCADE LASER
    2.
    发明专利
    DEVICE HAVING QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH10321951A

    公开(公告)日：1998-12-04

    申请号：JP4360898

    申请日：1998-02-25

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  GMACHI CLAIRE F ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a QC(quantum cascade) laser, which operates at a temperature higher than or equal to a ultra-low temperature, performs single-mode laser radiation, and makes continuous modulations possible over a wide wavelength region. SOLUTION: A quantum cascade laser 10 is provided with a first clad region 11, a second clad region 13, a core region 12 arranged between the regions 11 and 13, electrical contacts 14, 15 for making a current flow in a laser, and a grating structure 16 for giving dispersion feedback. A grating structure 16 is so isolated from the core region such that electromagnetic radiation in a confined laser mode has intensity which is non-zero in the grating structure 16. The grating structure 16 is constituted so as to perform single-mode laser radiation.

    ARTICLE WITH QUANTUM CASCADE LASER
    3.
    发明专利
    ARTICLE WITH QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH10144995A

    公开(公告)日：1998-05-29

    申请号：JP28032297

    申请日：1997-10-14

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SCAMARCIO GAETANO ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a new type of QC(quantum cascade) laser. SOLUTION: A QC laser has first and second clad layers and a core region between the clad layers. The core region has a plurality of nearly equal multilayer semiconductor repeated units 11, and each repeated unit has an active region 12 and a carrier injection region 13. The active region has an superlattice region with an upper mini band 171 and a lower mini band 161, and a mini gap is formed between the upper mini band and the lower mini band. A carrier injection region is selected, so that carriers can be phase-shifted easily from the lower mini band of a certain repetition unit to the upper mini band of repetition unit at an adjacent downstream side. The active region is selected so that the wavelength ranges from 3 to 15μm.

    QUANTUM WELL LAYER STRUCTURE
    4.
    发明专利
    QUANTUM WELL LAYER STRUCTURE 审中-公开

    公开(公告)号：JP2003115643A

    公开(公告)日：2003-04-18

    申请号：JP2002222096

    申请日：2002-07-30

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CHO ALFRED YI ,  GMACHL CLAIRE F ,  NG HOCK MIN

    IPC: H01L29/06 ,  H01S5/04 ,  H01S5/10 ,  H01S5/12 ,  H01S5/30 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To provide a method for removing uncertainty between relative values of energy levels even when an intrinsic internal electric fields can be present to generate an optical device based on a coupled quantum well. SOLUTION: The quantum well layer structure comprises a plurality of quantum well layers coupled by barrier layers. In this structure, at least one of a piezoelectric field and a pyroelectric field is formed, and the quantum well structure is doped with a Fermi-energy level filled between the base state and the excited state of the coupled quantum well layer.

    ARTICLE COMPRISING SEMICONDUCTOR LASER WHICH CAN BE MODULATED IN ELECTRIC FIELD
    7.
    发明专利
    ARTICLE COMPRISING SEMICONDUCTOR LASER WHICH CAN BE MODULATED IN ELECTRIC FIELD 失效

    公开(公告)号：JPH10275956A

    公开(公告)日：1998-10-13

    申请号：JP7633098

    申请日：1998-03-24

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To make it possible to modulate a laser in an electric field in an IR intermediate wavelength range by a method wherein an active region is provided with a plurality of repetition units consisting of a plurality of layers, the laser oscillation transition of the laser is turned into the non-resonance tunneling transition of charge carries from a first quantum state to a second quantum state and the frequency of photons is set as the function of an electric bias. SOLUTION: In an article, which comprises a laser having first and second contacts to apply an electric bias to a semiconductor structure comprising an active region 12, the region 12 has a plurality of the same repetition units consisting of a plurality of layers in the directions intersecting orthogonal the contacts and is selected so that a laser oscillation transition of the laser is a non-resonance tunneling transition of charge carriers from a first quantum state to a second quantum state. This transition is achieved by radiation of photons of an hν of energy. Here, the (h) is the constant of a plank and the (ν) is the frequency of the photons. This frequency of the photons is the function of the electric bias, which is applied to the semiconductor structure, and the laser can be modulated in an electric field in an IR intermediate wavelength range.

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