公开(公告)号：JP2000216194A

公开(公告)日：2000-08-04

申请号：JP2000012153

申请日：2000-01-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DEFELICE RICHARD ALDEN ,  DITTMANN ERIC WILLIAM ,  PAUL A SULLIVAN

IPC: H01L21/56 ,  H01L21/60 ,  H05K3/00 ,  H05K3/28 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To assemble a semiconductor package by a method wherein an epoxy layer is formed on a first surface and a first bonding site pattern, openings are provided to the epoxy layer, solder paste is deposited, the solder paste is made to reflow, and the epoxy layer is solidified. SOLUTION: A first bonding site pattern 22 is formed on the first surface of an IC chip 21, the first surface and the first bonding site pattern are coated with an epoxy layer 23, and openings 31 are provided to the epoxy layer 23 to expose the first bonding site pattern 22. Solder paste 35 is deposited in the openings 31, and then the second surface of an interconnection board 37 is brought into contact with the epoxy layer 23, the second bonding site pattern 38 is aligned with the openings 31 of the first surface of the IC chip 21, then the first an second surface are heated to make the solder paste 35 to reflow, and the epoxy layer 23 is solidified.

公开(公告)号：JPH11126728A

公开(公告)日：1999-05-11

申请号：JP23788198

申请日：1998-08-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SALVDOA DUNAS ,  KOLA RATNAJI RAO ,  HENRY Y KUMAGAI ,  MAUREEN E RAU ,  PAUL A SULLIVAN ,  TAI KING L

IPC: H01G4/33

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film capacitor of 100 nm or less thickness which has a layer of high-permittivity materials so that it has low leakage current and high breakdown voltage. SOLUTION: This capacitor has a dielectric of less than about 50 nm thickness, capacitive density of at least about 15 fF/μm , and a breakdown electric field of at least about 1 MV/cm. The dielectric material is a metallic oxide of titanium, niobium or tantalum, which can contain silicon or nitrogen. The dielectric material is formed on the whole first electrode by vapor-depositing the metallic element on the substrate or on the first electrode formed on the substrate. Then, this metallic element is anodized to form a dielectric material of required thickness. Finally, the top electrode is formed on the whole surface of the dielectric layer. The top electrode is a metallic element which does not alter electrical characteristics (e.g. leakage current or breakdown voltage) of the dielectric layer.