公开(公告)号：JPH11126976A

公开(公告)日：1999-05-11

申请号：JP23596698

申请日：1998-08-21

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KOLA RATNAJI RAO ,  MANZIONE LOUIS T ,  WATTS RODERICK K

IPC: B32B9/00 ,  H01L23/12 ,  H05K1/16 ,  H05K3/42 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To simply incorporate a passive type device between printed circuit board layers of multi-layer structure, by embedding a capacitor between a first printed circuit board layer and a second printed circuit board layer for mutual connection of a through hole. SOLUTION: Related to a mutual connection structure to an embedded layer, a through hole 24 is formed by a standard dilling technology and the through hole 24 is plated with a metal 25 such as copper. With the function of an electrode 19 of a capacitor electrode 18 together with the fact that an Al layer does not entirely cover a capacitor dielectrics layer, the importance of an exposed dielectrics part 22 being left over is clear. A surface mutual connection structure 26 contacts a tantalum layer 12 which is a lower side plate of the capacitor, a surface mutual connection structure 27 contacts an electrode extension part 19 of the capacitor electrode 18 of the capacitor, and a surface mutual connection structure 28 and a surface mutual connection structure 29 contact an inductor spiral strip 21. Thus, the through hole is allowed to mutually connect two electrodes embedded in the capacitor.

公开(公告)号：JPH11126728A

公开(公告)日：1999-05-11

申请号：JP23788198

申请日：1998-08-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SALVDOA DUNAS ,  KOLA RATNAJI RAO ,  HENRY Y KUMAGAI ,  MAUREEN E RAU ,  PAUL A SULLIVAN ,  TAI KING L

IPC: H01G4/33

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film capacitor of 100 nm or less thickness which has a layer of high-permittivity materials so that it has low leakage current and high breakdown voltage. SOLUTION: This capacitor has a dielectric of less than about 50 nm thickness, capacitive density of at least about 15 fF/μm , and a breakdown electric field of at least about 1 MV/cm. The dielectric material is a metallic oxide of titanium, niobium or tantalum, which can contain silicon or nitrogen. The dielectric material is formed on the whole first electrode by vapor-depositing the metallic element on the substrate or on the first electrode formed on the substrate. Then, this metallic element is anodized to form a dielectric material of required thickness. Finally, the top electrode is formed on the whole surface of the dielectric layer. The top electrode is a metallic element which does not alter electrical characteristics (e.g. leakage current or breakdown voltage) of the dielectric layer.