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公开(公告)号：JP2001094373A
公开(公告)日：2001-04-06
申请号：JP2000226698
申请日：2000-07-27
Applicant: LUCENT TECHNOLOGIES INC
Inventor： MANFRA MICHAEL JAMES , PFEIFFER LOREN NEIL , WEST KENNETH WILLIAM , WONG YIU-HUEN
Abstract: PROBLEM TO BE SOLVED: To provide a high quality TFR causing a low loss with respect to an electric signal to be impressed to the TFR. SOLUTION: A thin film resonator(TFR) is manufactured so as to have an improved piezoelectric film 46 epitaxially grown on a growing surface 40, and the piezoelectric film comes to have less grain boundaries. The epitaxial growth means the piezoelectric film having a crystallographical azimuth which is taken from the crystallographical azimuth of a single crystal substrate or a growing surface or emulates this. For example, by epitaxially growing the piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film completely or nearly free from a grain boundary is manufactured. According to another aspect of this system, in a method of manufacturing the TFR, the piezoelectric film is first grown on a substrate. Continuously, a part of the substrate is removed and an electrode is accumulated on the one side of the piezoelectric film.
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公开(公告)号：AU4884000A
公开(公告)日：2001-02-01
申请号：AU4884000
申请日：2000-07-26
Applicant: LUCENT TECHNOLOGIES INC
Inventor： MANFRA MICHAEL JAMES , PFEIFFER LOREN NEIL , WEST KENNETH WILLIAM , WONG YIU-HUEN
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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Patent Agency Ranking
公开(公告)号：DE60036988D1
公开(公告)日：2007-12-20
申请号：DE60036988
申请日：2000-07-17
Applicant: LUCENT TECHNOLOGIES INC
Inventor： MANFRA MICHAEL JAMES , PFEIFFER LOREN NEIL , WEST KENNETH WILLIAM , WONG YIU-HUEN
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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公开(公告)号：DE60036988T2
公开(公告)日：2008-08-28
申请号：DE60036988
申请日：2000-07-17
Applicant: LUCENT TECHNOLOGIES INC
Inventor： MANFRA MICHAEL JAMES , PFEIFFER LOREN NEIL , WEST KENNETH WILLIAM , WONG YIU-HUEN
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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公开(公告)号：CA2314375A1
公开(公告)日：2001-01-29
申请号：CA2314375
申请日：2000-07-24
Applicant: LUCENT TECHNOLOGIES INC
Inventor： WONG YIU-HUEN , WEST KENNETH WILLIAM , PFEIFFER LOREN NEIL , MANFRA MICHAEL JAMES
IPC: C23C14/06 , C23C16/34 , H01L41/08 , H01L41/22 , H03H3/02 , H03H9/15 , H03H9/17 , H01P11/00 , H01P7/00
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric fi lm which is epitaxially grown on a growing surface, resulting in a piezoelectri c film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxiall y growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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公开(公告)号：CA2314375C
公开(公告)日：2003-11-18
申请号：CA2314375
申请日：2000-07-24
Applicant: LUCENT TECHNOLOGIES INC
Inventor： WONG YIU-HUEN , PFEIFFER LOREN NEIL , MANFRA MICHAEL JAMES , WEST KENNETH WILLIAM
IPC: C23C14/06 , C23C16/34 , H01L41/08 , H01L41/22 , H03H3/02 , H03H9/15 , H03H9/17 , H01P11/00 , H01P7/00
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric fi lm which is epitaxially grown on a growing surface, resulting in a piezoelectri c film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxiall y growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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公开(公告)号：BR0002976A
公开(公告)日：2001-03-13
申请号：BR0002976
申请日：2000-07-19
Applicant: LUCENT TECHNOLOGIES INC
Inventor： MANFRA MICHAEL JAMES , PFEIFFER LOREN NEIL , WEST KENNETH WILLIAM , WONG YIU-HUEN
Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
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