公开(公告)号：JPH10282364A

公开(公告)日：1998-10-23

申请号：JP8196898

申请日：1998-03-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MACDONALD WILLIAM MICHAEL ,  WONG YIU-HUEN

IPC: G02B6/32 ,  G02B6/36 ,  G02B6/42 ,  H01S5/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a SiOB connection device in which the laser beam need not be overhung at the cavity edge, and the reliability can be maintained. SOLUTION: An assembly to optically connect a first optical device 17 to a second optical device 19 comprises a base plate 10 having a cavity 13, and a lens 15 arranged in the cavity 13, the first optical device 17 is provided with a light beam radiator arranged on the base plate 10, the output beam of the light beam radiator is received by the lens 15, the second optical device 19 is arranged so as to receive the light beam converged by the lens 15, and the cavity 13 is asymmetrical in shape.

公开(公告)号：JP2000232208A

公开(公告)日：2000-08-22

申请号：JP35361599

申请日：1999-12-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KIZILYALLI ISIK C ,  MERCHANT SAILESH MANSINH ,  ROY PRADIP K ,  WONG YIU-HUEN

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/285 ,  H01L21/82 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To add a buried memory to a capacitor without making a sharp change to the manufacturing process of the capacitor by a method wherein in the case where the dielectric layer of the capacitor is formed of a tantalum pentaoxide (Ta2O5) layer, a diffused barrier layer formed of a tungsten nitride(WN) layer instead of a titanium nitride(TiN) layer is provided in the capacitor. SOLUTION: A transistor structure 205 and an interconnected part 210 coming into contact with a capacitor 215 are shown as parts of a buried memory cell structure 200. The capacitor 215 has a first (bottom) electrode comprising a conductive layer 220 for adhesion, a barrier layer 225, which is formed on the interconnected part 210 and consists of a tungsten nitride layer or a tungsten silicon nitride layer, and a dielectric layer 230 and a titanium layer on the first electrode, a second electrode 240 on the layer 230 and a layer 235, which is used as a selective matter, reduce the layer 230. A first layer on the interconnected region is made of the titanium layer and the material for the layer 225 is the tungsten nitride(WN) layer, the tungsten silicon nitride(WSiN) layer or a combination of the tungsten nitride(WN) layer to the tungsten silicon nitride(WSiN) layer.

公开(公告)号：JP2001148603A

公开(公告)日：2001-05-29

申请号：JP2000278995

申请日：2000-09-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： KORISCH ILYA A ,  MANZIONE LOUIS T ,  TSAI MING-JU ,  WONG YIU-HUEN

IPC: H01Q13/08 ,  H01Q1/00 ,  H01Q1/24 ,  H01Q1/38 ,  H01Q1/42 ,  H01Q9/04 ,  H01Q23/00

Abstract: PROBLEM TO BE SOLVED: To provide a small antenna package for radio communication equipment. SOLUTION: A radiation patch 38 which is adapted to the outer outline of radio communication equipment and has necessary antenna constitution is installed in a plastic piece 32 on a face 40 detached from a printed board 36. A ground face 42 is grounded to the opposite face of the plastic piece 32 and a feed 44 extends through the plastic piece 32. The plastic piece 32 covers at least a part of a transmission/reception switch 46. Consequently, the metallic face of the transmission/reception switch 46 is used as an extended ground face against an antenna.

公开(公告)号：JP2001094373A

公开(公告)日：2001-04-06

申请号：JP2000226698

申请日：2000-07-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MANFRA MICHAEL JAMES ,  PFEIFFER LOREN NEIL ,  WEST KENNETH WILLIAM ,  WONG YIU-HUEN

IPC: C23C14/06 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15 ,  H03H9/17

Abstract: PROBLEM TO BE SOLVED: To provide a high quality TFR causing a low loss with respect to an electric signal to be impressed to the TFR. SOLUTION: A thin film resonator(TFR) is manufactured so as to have an improved piezoelectric film 46 epitaxially grown on a growing surface 40, and the piezoelectric film comes to have less grain boundaries. The epitaxial growth means the piezoelectric film having a crystallographical azimuth which is taken from the crystallographical azimuth of a single crystal substrate or a growing surface or emulates this. For example, by epitaxially growing the piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film completely or nearly free from a grain boundary is manufactured. According to another aspect of this system, in a method of manufacturing the TFR, the piezoelectric film is first grown on a substrate. Continuously, a part of the substrate is removed and an electrode is accumulated on the one side of the piezoelectric film.

公开(公告)号：JP2000150670A

公开(公告)日：2000-05-30

申请号：JP31815199

申请日：1999-11-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CLEMENS JAMES T ,  DIODATO PHILIP W ,  WONG YIU-HUEN

IPC: H01L27/11 ,  G11C11/412 ,  G11C11/413 ,  H01L21/8244

Abstract: PROBLEM TO BE SOLVED: To reduce complexity of circuit in the material aspect and to obtain a memory cell having high access speed by feeding a current to a transistor through a capacitor. SOLUTION: A 4T/2C SRAM 60 includes a parasitic resistance reflected as a leas current from R1 71 and R2 72. The 4T/2C SRAM 60 also includes a flip-flop formed through cross coupling of two inverters and two access transistors T1 68 and T2 64. A memory cell is an intended conduction path for obtaining currents passing through the parasitic resistances R1 71 and R2 72 utilizing capacitors C1 61 and C2 62. These parasitic resistances R1 71 and R2 72 are reflected as leak currents passing through the dielectric of the capacitors C1 61 and C2 62, respectively, and compensate for some other leak current from four transistors T1 63, T2 64, T3 65 and T4 66.

公开(公告)号：JPH1131840A

公开(公告)日：1999-02-02

申请号：JP4065898

申请日：1998-02-23

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DAUTARTAS MINDAUGAS FERNAND ,  WONG YIU-HUEN

IPC: H01L21/306 ,  G02B6/36 ,  G02B6/42 ,  H01L21/308 ,  H01L31/12 ,  H01S5/00 ,  H01S5/022 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a feature object with which when to finish etching process can be judged visually. SOLUTION: A substrate 11 is etched via a mask 60 comprising at least two openings 61 and 62 which are away from each other by a specified distance, with the aperture of the one opening wider than the other, and the etching forms respective etched features 63 and j64 on the substrate under each opening, and the etching is continued until the two etched features 63 and 64 coalesce each other to form a single channel comprising a wide end part and a narrow end part (in other words, the etching is stopped at that time).

公开(公告)号：DE60036988T2

公开(公告)日：2008-08-28

申请号：DE60036988

申请日：2000-07-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MANFRA MICHAEL JAMES ,  PFEIFFER LOREN NEIL ,  WEST KENNETH WILLIAM ,  WONG YIU-HUEN

IPC: C23C14/06 ,  H03H9/17 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

公开(公告)号：DE69929409D1

公开(公告)日：2006-04-06

申请号：DE69929409

申请日：1999-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CLEMENS JAMES T ,  DIODATO PHILIP W ,  WONG YIU-HUEN

IPC: G11C11/412 ,  H01L27/11 ,  G11C11/413 ,  H01L21/8244

Abstract: An apparatus and method for constructing a capacitor loaded memory cell. This capacitor loaded memory cell operates as a static random access memory (SRAM) cell if a particular capacitor and transistor configuration is used. Normally, capacitors are not an obvious choice as a load device for a memory cell because the intrinsic nature of capacitors is one that blocks the flow of direct current, the invention takes into account the secondary effects such as leakage of a particular dielectric used in the construction of the capacitor to modify the current blocking nature of the capacitor.

公开(公告)号：CA2314375A1

公开(公告)日：2001-01-29

申请号：CA2314375

申请日：2000-07-24

Applicant: LUCENT TECHNOLOGIES INC

Inventor： WONG YIU-HUEN ,  WEST KENNETH WILLIAM ,  PFEIFFER LOREN NEIL ,  MANFRA MICHAEL JAMES

IPC: C23C14/06 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15 ,  H03H9/17 ,  H01P11/00 ,  H01P7/00

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric fi lm which is epitaxially grown on a growing surface, resulting in a piezoelectri c film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxiall y growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

公开(公告)号：DE60036988D1

公开(公告)日：2007-12-20

申请号：DE60036988

申请日：2000-07-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MANFRA MICHAEL JAMES ,  PFEIFFER LOREN NEIL ,  WEST KENNETH WILLIAM ,  WONG YIU-HUEN

IPC: C23C14/06 ,  H03H9/17 ,  C23C16/34 ,  H01L41/08 ,  H01L41/22 ,  H03H3/02 ,  H03H9/15

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.