ELECTRONIC BEAM IMAGE PICKUP DEVICE

    公开(公告)号:JP2001168025A

    公开(公告)日:2001-06-22

    申请号:JP2000306943

    申请日:2000-10-06

    Abstract: PROBLEM TO BE SOLVED: To provide a device for projection lithography. SOLUTION: This device is provided with at least one magnetic lens. The lens is provided with a segmented magnetic liner inside. The segmented liner has the segments of magnetic materials alternate with the segments of non- magnetic materials. The liner is continued through the lens. Both the lens and the liner share the same optical axis. The liner practically removes a distortion in the magnetic field of the lens. Further, the liner provides the density of magnetic flux less than saturation within the lens.

    ELECTRON BEAM IMAGE PICKUP APPARATUS

    公开(公告)号:JP2001160536A

    公开(公告)日:2001-06-12

    申请号:JP2000306942

    申请日:2000-10-06

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for projection lithography. SOLUTION: This apparatus is provided with at least one doublet lens. A scattering filter with aperture is interposed between two lenses of the magnetic doublet lens. The scattering filter is located on the rear focal plane of the magnetic doublet lens system or conjugate plane equal thereto. Additionally, this apparatus is provided with two magnetic clamps interposed between two lenses of the magnetic doublet lens. These clamps are located and constituted, so as not to practically overlap the magnetic fields of the magnetic lenses. The magnetic clamp is located, so that magnetic field from the lens of the magnetic doublet lens cannot be extended to the scattering filter with aperture.

    3.
    发明专利
    未知

    公开(公告)号:DE60040664D1

    公开(公告)日:2008-12-11

    申请号:DE60040664

    申请日:2000-09-04

    Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL TM electron patterning tool.

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