CHARGED PARTICLE-RADIATING SYSTEM

    公开(公告)号:JP2001229865A

    公开(公告)日:2001-08-24

    申请号:JP2000309801

    申请日:2000-10-10

    Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for controlling electron emittance. SOLUTION: In the method and apparatus, a lens row is disposed in a drift space for components of a charged particle radiating system. The components of the radiating system are an electron gun and a linear tube or drift tube mounted on the electron gun. The lens row is a mesh grid or a combination of the mesh grid and continuous foil. The lens row forms a plurality of micro- lenses for imitating an optical flying-eye lens. The lens row separates an actual incident electron beam into a plurality of sub-beams. As a result, beam emittance outputted is different from the incident emittance, but the total current for the beam remains unchanged.

    MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT

    公开(公告)号:JP2001023897A

    公开(公告)日:2001-01-26

    申请号:JP2000135070

    申请日:2000-05-08

    Abstract: PROBLEM TO BE SOLVED: To improve an SCALPEL(scatter angle limited projection electron beam lithography) electron beam source in efficiency and uniformity. SOLUTION: A method and an apparatus for electron beam lithography, where a Wehnelt electron gun is modified to improve the uniformity of an electron beam is provided. A mesh grid is applied to the Wehnelt aperture, and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e., less than 100 volts. The voltage can be switched conveniently and economically, using semiconductor drive circuits.

    ELECTRONIC BEAM IMAGE PICKUP DEVICE

    公开(公告)号:JP2001168025A

    公开(公告)日:2001-06-22

    申请号:JP2000306943

    申请日:2000-10-06

    Abstract: PROBLEM TO BE SOLVED: To provide a device for projection lithography. SOLUTION: This device is provided with at least one magnetic lens. The lens is provided with a segmented magnetic liner inside. The segmented liner has the segments of magnetic materials alternate with the segments of non- magnetic materials. The liner is continued through the lens. Both the lens and the liner share the same optical axis. The liner practically removes a distortion in the magnetic field of the lens. Further, the liner provides the density of magnetic flux less than saturation within the lens.

    ELECTRON BEAM IMAGE PICKUP APPARATUS

    公开(公告)号:JP2001160536A

    公开(公告)日:2001-06-12

    申请号:JP2000306942

    申请日:2000-10-06

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for projection lithography. SOLUTION: This apparatus is provided with at least one doublet lens. A scattering filter with aperture is interposed between two lenses of the magnetic doublet lens. The scattering filter is located on the rear focal plane of the magnetic doublet lens system or conjugate plane equal thereto. Additionally, this apparatus is provided with two magnetic clamps interposed between two lenses of the magnetic doublet lens. These clamps are located and constituted, so as not to practically overlap the magnetic fields of the magnetic lenses. The magnetic clamp is located, so that magnetic field from the lens of the magnetic doublet lens cannot be extended to the scattering filter with aperture.

    MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT

    公开(公告)号:JP2001015429A

    公开(公告)日:2001-01-19

    申请号:JP2000135071

    申请日:2000-05-08

    Abstract: PROBLEM TO BE SOLVED: To improve efficiency and uniformity of an electron beam source in a SCALPEL system by reverse-biasing Wehnelt electrodes of a Wehnelt gun and providing tapered aperture. SOLUTION: The improved Wehnelt electron gun is different from the standard SCALPEL Wehnelt in such a way that the Wehnelt 37 is positively biased with a range of bias voltage between 2000-8000 V. It is reverse-bias compared to the standard SCALPEL Wehnelt. As a result, output beam 41 of laminar flow having almost parallel electron flux lines can be obtained. Namely, few or no crossover exists in the electron beam pattern. In order to improve beam characteristics from the reverse-bias Wehnelt, computer simulation shows that it is preferable that the Wehnelt aperture 38 is tapered.

    7.
    发明专利
    未知

    公开(公告)号:DE60040664D1

    公开(公告)日:2008-12-11

    申请号:DE60040664

    申请日:2000-09-04

    Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL TM electron patterning tool.

    8.
    发明专利
    未知

    公开(公告)号:DE60044167D1

    公开(公告)日:2010-05-27

    申请号:DE60044167

    申请日:2000-06-13

    Abstract: A cathode (110) with an improved work function, for use in a lithographic system, such as the SCALPEL„¢ system, which includes a buffer (114) between a substrate (112) and an emissive layer (116), where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

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