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公开(公告)号:JP2003092411A
公开(公告)日:2003-03-28
申请号:JP2002201704
申请日:2002-07-10
Applicant: LUCENT TECHNOLOGIES INC
Inventor: BAO ZHENAN , SCHON JAN HENDRIK
IPC: H01L51/05 , H01L29/786 , H01L51/00 , H01L51/30 , H01L51/40
Abstract: PROBLEM TO BE SOLVED: To provide a new organic field effect transistor (OFET). SOLUTION: The organic field effect transistor (OFET) has a gate, a source and a drain. The OFET has single layers of organic molecules formed between a gate electrode and a source electrode, a drain electrode. The single layers function as channels and a gate dielectric layer for the OFET.
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公开(公告)号:JP2003197901A
公开(公告)日:2003-07-11
申请号:JP2002268944
申请日:2002-09-13
Applicant: LUCENT TECHNOLOGIES INC
Inventor: BAO ZHENAN , FILAS ROBERT WILLIAM , HO PETER KIAN-HOON , SCHON JAN HENDRIK
IPC: B82B1/00 , H01L21/28 , H01L21/336 , H01L23/58 , H01L29/06 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To fabricate a miniature FET element. SOLUTION: The device comprises a first element, a second element, and a monolayer for blocking formation of the second element on the first element wherein the first and second elements are spaced apart by the length of the monolayer. More specifically, limitation of photolithographic technology is solved to enhance the switching rate and frequency response of an FET by decreasing the isolation distance between the drain electrode and the source electrode thereby decreasing the channel width. COPYRIGHT: (C)2003,JPO
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公开(公告)号:CA2380209A1
公开(公告)日:2002-11-17
申请号:CA2380209
申请日:2002-04-04
Applicant: LUCENT TECHNOLOGIES INC
Inventor: SCHON JAN HENDRIK , ROGERS JOHN A , BAO ZHENAN
IPC: H01L21/8236 , H01L21/336 , H01L27/088 , H01L27/28 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
Abstract: A three-terminal device includes first electrode, second electrode, gat e electrode and an active channel coupling the first and second electrodes. Th e active channel has a layer of organic molecules with conjugated multiple bonds. The delocalized .pi.-orbitals associated with the conjugated multiple bonds exte nd normal to the layer.
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