TRANSISTOR AND DEVICE
    2.
    发明专利

    公开(公告)号:JP2003197901A

    公开(公告)日:2003-07-11

    申请号:JP2002268944

    申请日:2002-09-13

    Abstract: PROBLEM TO BE SOLVED: To fabricate a miniature FET element. SOLUTION: The device comprises a first element, a second element, and a monolayer for blocking formation of the second element on the first element wherein the first and second elements are spaced apart by the length of the monolayer. More specifically, limitation of photolithographic technology is solved to enhance the switching rate and frequency response of an FET by decreasing the isolation distance between the drain electrode and the source electrode thereby decreasing the channel width. COPYRIGHT: (C)2003,JPO

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