公开(公告)号：JP2000031580A

公开(公告)日：2000-01-28

申请号：JP16529899

申请日：1999-06-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHAKRABARTI UTPAL KUMAR ,  HAMM ROBERT A ,  SEILER JOSEPH BRIAN ,  SHTENGEL GLEB E ,  SMITH LAWRENCE E

IPC: H01S5/00 ,  G02F1/025 ,  H01L33/34 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To reduce internal loss of laser recessed area with inclusion of a lower threshold value current and a higher gradient efficiency by forming a covering layer including a Zn-doping agent adjacent to a semiconductor waveguide area and forming thereon a semiconductor contact area having sufficient electric conductivity of InGaAs or the like. SOLUTION: An electric absorption modulation laser device 10 is provided with a laser part 11 and modulating part on a substrate 13 including InP. On the substrate 13, a waveguide area 14 including p-n junction 26 selected from InGaAs and InGaAsP is formed adjacent to a block layer 25. A covering layer 15 of InP material is formed adjacent to the waveguide area 14 and a semiconductor contact layer 16 including p-type doping agent of carbon impurity having InGaAs for adjusting conductivity is formed to on such layer to attain sufficient electric conductivity through contact with a low resistance with the waveguide area 14. Electrodes 17, 18, 19 supply the bias to cause the laser part 11 to radiate the light beam and modulation part to control absorption of radiated beam.

公开(公告)号：JP2001267550A

公开(公告)日：2001-09-28

申请号：JP2001001359

申请日：2001-01-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MICHAEL JEVA ,  JAYATAAZA N HORAVANAHARI ,  ABDULLAH OOGAZADEN ,  SMITH LAWRENCE E

IPC: G02F1/025 ,  G02F1/017 ,  H01L21/205 ,  H01L29/207 ,  H01L33/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a barrier spike for prevention of diffusion. SOLUTION: This spike prevents diffusion of dopants into another layer, without having to form a p-n junction in the layer. The spikes are, for example, Al or an aluminum-containing material, such as AlAs and have a thickness of he order of 1 nm. The spikes of the present invention can be used to stop dopant diffusion out of a doped layer, in a variety of III-V semiconductor structures, such as InP-based PIN devices.

公开(公告)号：AU2772001A

公开(公告)日：2001-07-24

申请号：AU2772001

申请日：2001-01-08

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GEVA MICHAEL ,  HOLAVANAHALLI JAYATIRTHA N ,  OUGAZZADEN ABDALLAH ,  SMITH LAWRENCE E

IPC: G02F1/017 ,  H01S5/32 ,  G02F1/015