公开(公告)号：JP2000049713A

公开(公告)日：2000-02-18

申请号：JP19788199

申请日：1999-07-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ENG LARS E ,  KAZARINOV RUDOLF FEODOR ,  SHTENGEL GLEB E

IPC: H04B10/50 ,  H04B10/572 ,  H04B10/14 ,  H04B10/02 ,  H04B10/04 ,  H04B10/06

Abstract: PROBLEM TO BE SOLVED: To provide an optical communication system, provided with simultaneous wavelength locking and spectrum filtering. SOLUTION: This optical communication system is provided with a light source 10, provided with a semiconductor laser whose wavelength is locked by a spectrum selection element 14, and output is simultaneously filtered by the same spectrum selecting element 14. Thus, light source output suitable for the longer distance transmission, and the higher speed transmission is obtained. In an example execution form, a fiber Bragg grating is used as a simultaneous selective element and the reduction of chirps, an increased quenching ratio and heat insulation wavelength stability within 2 ppm are obtained.

公开(公告)号：JP2000031580A

公开(公告)日：2000-01-28

申请号：JP16529899

申请日：1999-06-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHAKRABARTI UTPAL KUMAR ,  HAMM ROBERT A ,  SEILER JOSEPH BRIAN ,  SHTENGEL GLEB E ,  SMITH LAWRENCE E

IPC: H01S5/00 ,  G02F1/025 ,  H01L33/34 ,  H01S5/026 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To reduce internal loss of laser recessed area with inclusion of a lower threshold value current and a higher gradient efficiency by forming a covering layer including a Zn-doping agent adjacent to a semiconductor waveguide area and forming thereon a semiconductor contact area having sufficient electric conductivity of InGaAs or the like. SOLUTION: An electric absorption modulation laser device 10 is provided with a laser part 11 and modulating part on a substrate 13 including InP. On the substrate 13, a waveguide area 14 including p-n junction 26 selected from InGaAs and InGaAsP is formed adjacent to a block layer 25. A covering layer 15 of InP material is formed adjacent to the waveguide area 14 and a semiconductor contact layer 16 including p-type doping agent of carbon impurity having InGaAs for adjusting conductivity is formed to on such layer to attain sufficient electric conductivity through contact with a low resistance with the waveguide area 14. Electrodes 17, 18, 19 supply the bias to cause the laser part 11 to radiate the light beam and modulation part to control absorption of radiated beam.