公开(公告)号：JP2000028975A

公开(公告)日：2000-01-28

申请号：JP12086499

申请日：1999-04-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BYLSMA RICHARD BENDICKS ,  KETELSEN LEONARD J-P ,  SPUTZ SHARON KAY

IPC: G02F1/015 ,  G02F1/025 ,  H01S5/026

Abstract: PROBLEM TO BE SOLVED: To provide modulator for analog applications by changing the band gap wavelength of a waveguide region along a direction selected from a light propagation route via the modulator and a route perpendicular to this light propagation route. SOLUTION: The device of an electricity absorption modulation laser 10 is formed on a substrate 11. A laser region 12 and modulation region 13 constituting the laser portion and modulation portion of the device are formed by depositing plural semiconductor layers by chemical vapor deposition. More specifically, a multiple quantum well waveguide region 14 is formed on a substrate 11. When these regions are biased, the band gap of the laser region 12 is selected so as to emit light and the band gap of the modulation region 13 is selected so as to absorb the light. The band gap is held constant in the laser region 12 and begins to decrease in a transition region 20 between the laser region 12 and the modulation region 13. The band gap changes gradually in this transition region 13.