MULTI-WAVELENGTH ETALON AND TUNABLE LASER ASSEMBLY

    公开(公告)号:JP2001015856A

    公开(公告)日:2001-01-19

    申请号:JP2000142472

    申请日:2000-05-15

    Abstract: PROBLEM TO BE SOLVED: To realize a stepped etalon which is suitable for a very accurate laser tuning application that is required to be accurately tuned to a laser output frequency in a narrow range of 1 nm or below. SOLUTION: The nominal thickness (d) of an etalon 30 is selected so that a transmission peak occurs at a wavelength substantially equal to a selected light communication channel (e.g. 1,550 nm) and a next peak occurs at the wavelength of an adjacent communication channel (e.g. in a system where a channel space is approx. 0.4 nm, 1550.4 nm). A plurality of steps are formed on the one side 14 of the etalon 30. The size Δd of a step is smaller than a channel space cs and substantially optimized so that a peak or a trough in a transmission curve in the region of one step overlaps with a steep slope portion of the transmission curve for one or more other steps.

    PROTRUDING/RETRACTING PIN OPTICAL TAP ON OPTICAL SUB- ASSEMBLY

    公开(公告)号:JP2001284694A

    公开(公告)日:2001-10-12

    申请号:JP2001077666

    申请日:2001-03-19

    Abstract: PROBLEM TO BE SOLVED: To provide a protruding/retracting pin optical tap on an optical sub-assembly for transmitting a laser beam signal generated from one laser beam source to a plurality of optical elements disposed at different distances from the source. SOLUTION: An apparatus and a method for supplying individual laser beam signals supplied from one laser beam source to the plurality of optical elements use a base for a first optical element. Thus, a part of the signals supplied from the one source is received by the first element. The residue of the signals is propagated over the first element, and received by the second optical element. The obtained individual signals are constituted without using a beam splitter.

    MODULATOR FOR ANALOG APPLICATION
    3.
    发明专利

    公开(公告)号:JP2000028975A

    公开(公告)日:2000-01-28

    申请号:JP12086499

    申请日:1999-04-28

    Abstract: PROBLEM TO BE SOLVED: To provide modulator for analog applications by changing the band gap wavelength of a waveguide region along a direction selected from a light propagation route via the modulator and a route perpendicular to this light propagation route. SOLUTION: The device of an electricity absorption modulation laser 10 is formed on a substrate 11. A laser region 12 and modulation region 13 constituting the laser portion and modulation portion of the device are formed by depositing plural semiconductor layers by chemical vapor deposition. More specifically, a multiple quantum well waveguide region 14 is formed on a substrate 11. When these regions are biased, the band gap of the laser region 12 is selected so as to emit light and the band gap of the modulation region 13 is selected so as to absorb the light. The band gap is held constant in the laser region 12 and begins to decrease in a transition region 20 between the laser region 12 and the modulation region 13. The band gap changes gradually in this transition region 13.

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