公开(公告)号：JP2001189452A

公开(公告)日：2001-07-10

申请号：JP2000307041

申请日：2000-10-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TAN JIAN ,  LOTFI ASHRAF W

IPC: H01L21/336 ,  H01L29/20 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a MOSFET and its manufacturing method used for an application for changing over power, in which drift resistance and channel resistance are improved. SOLUTION: This MOSFET has an epitaxial layer under a gate oxide layer 460, and has a substrate 410, in which a part of the epitaxial layer is used as a part of a gate region in a metal-oxide semiconductor field effect transistor(MOSFET), an N-type drift region 430 located so as to be brought into contact with a gate region from the side-face direction, and a source region 440 and a drain region 450 located in the epitaxial layer and laterally straddling the gate region 420 and the N-type drift region 430, respectively.

公开(公告)号：DE60043646D1

公开(公告)日：2010-02-25

申请号：DE60043646

申请日：2000-11-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： LOFTI ASHRAF W ,  TAN JIAN

IPC: H01L29/16 ,  H01L29/24 ,  H01L21/04 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/786 ,  H02M3/335

Abstract: A lateral metal-oxide semiconductor field effect transistor (MOSFET) formed over a substrate of a semiconductor wafer, a method of manufacturing the same and a semiconductor device incorporating the MOSFET or the method. In one embodiment, the MOSFET includes a silicon carbide layer located over or withing the substrate, a gate formed on the silicon carbide layer. The MOSFET further includes source and drain regions located in the silicon carbide layer and in contact with the gate, the silicon carbide layer increasing a breakdown voltage of the MOSFET.

公开(公告)号：BR0006785A

公开(公告)日：2001-09-04

申请号：BR0006785

申请日：2000-11-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TAN JIAN ,  LOTFI ASHRAF WAGIH

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/24 ,  H01L29/78 ,  H01L29/786 ,  H01L29/772

Abstract: A lateral metal-oxide semiconductor field effect transistor (MOSFET) formed over a substrate of a semiconductor wafer, a method of manufacturing the same and a semiconductor device incorporating the MOSFET or the method. In one embodiment, the MOSFET includes a silicon carbide layer located over or withing the substrate, a gate formed on the silicon carbide layer. The MOSFET further includes source and drain regions located in the silicon carbide layer and in contact with the gate, the silicon carbide layer increasing a breakdown voltage of the MOSFET.

公开(公告)号：DE60041233D1

公开(公告)日：2009-02-12

申请号：DE60041233

申请日：2000-10-03

Applicant: LUCENT TECHNOLOGIES INC

Inventor： LOTFI ASHRAF W ,  TAN JIAN

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/20

Abstract: A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.