公开(公告)号：JP2001004966A

公开(公告)日：2001-01-12

申请号：JP2000166997

申请日：2000-06-05

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GILL DOUGLAS M ,  JACOBSON DALE CONRAD ,  WOLFE RAYMOND

IPC: G02F1/035 ,  G02F1/21 ,  G02F1/225

Abstract: PROBLEM TO BE SOLVED: To obtain a profile of an electric field more highly matching with the profile of an optical field to produce the maximum optical field and electric field by forming side walls in such a manner that at least a part of the side wall forms an acute angle. SOLUTION: The peak of the profile of the RF field is shifted towards under the surface of a lithium niobate substrate. A side wall 55 having an acute angle is formed on the mesa including a waveguide 52. In this structure, the peak of the RF field formed on electrodes 53, 54 is shifted towards near the peak of the optical profile to improve the effect of the electron-opticalcal interaction and to optimize the overlap. In this device structure, the electrode 54 is offset in the z-direction due to the ridge structure, namely, the electrode 54 is sunk. A device having equivalent performance to the effect of the side wall having an acute angle can be formed with a common planar electrode.