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    ELECTRONIC-OPTICAL MODULATOR AND ITS PRODUCTION
    2.
    发明专利
    ELECTRONIC-OPTICAL MODULATOR AND ITS PRODUCTION 失效

    公开(公告)号：JP2001004966A

    公开(公告)日：2001-01-12

    申请号：JP2000166997

    申请日：2000-06-05

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： GILL DOUGLAS M ,  JACOBSON DALE CONRAD ,  WOLFE RAYMOND

    IPC: G02F1/035 ,  G02F1/21 ,  G02F1/225

    Abstract: PROBLEM TO BE SOLVED: To obtain a profile of an electric field more highly matching with the profile of an optical field to produce the maximum optical field and electric field by forming side walls in such a manner that at least a part of the side wall forms an acute angle. SOLUTION: The peak of the profile of the RF field is shifted towards under the surface of a lithium niobate substrate. A side wall 55 having an acute angle is formed on the mesa including a waveguide 52. In this structure, the peak of the RF field formed on electrodes 53, 54 is shifted towards near the peak of the optical profile to improve the effect of the electron-opticalcal interaction and to optimize the overlap. In this device structure, the electrode 54 is offset in the z-direction due to the ridge structure, namely, the electrode 54 is sunk. A device having equivalent performance to the effect of the side wall having an acute angle can be formed with a common planar electrode.

    METHOD FOR ETCHING STRUCTURE INTO SUBSTRATE
    3.
    发明专利
    METHOD FOR ETCHING STRUCTURE INTO SUBSTRATE 审中-公开

    公开(公告)号：JP2003139982A

    公开(公告)日：2003-05-14

    申请号：JP2002196392

    申请日：2002-07-04

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： GILL DOUGLAS M ,  JACOBSON DALE CONRAD

    IPC: G02B6/13 ,  G02B6/12 ,  G02B6/134 ,  G02B6/136 ,  G02F1/035

    Abstract: PROBLEM TO BE SOLVED: To provide a method for etching structures into ferroelectric materials. SOLUTION: A single layer of ions is implanted into a film surface and the material between the surface and the ion implantation layer is etched away without annealing the substrate. Electronic damage and crystalline damage of high levels are formed with single ion implantation with sufficient energy. Although the fact that the crystalline damage increases an etch rate of the ferroelectric material is publicly known, the inventors have discovered that the electronic damage increases the etch rate of the material. Damaged LiNbO3 has an etch rate much faster than undamaged LiNbO3 and an annealing process is not necessary for forming an etch stopping layer.

    MACH-ZEHNDER ELECTROOPTIC MODULATOR
    4.
    发明专利
    MACH-ZEHNDER ELECTROOPTIC MODULATOR 审中-公开

    公开(公告)号：JP2002350796A

    公开(公告)日：2002-12-04

    申请号：JP2002111756

    申请日：2002-04-15

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： GATES JOHN VANATTA II ,  GILL DOUGLAS M ,  SMITH ROBERT W

    IPC: G02F1/035 ,  G02F1/03 ,  G02F1/225

    Abstract: PROBLEM TO BE SOLVED: To provide a Mach-Zehnder electrooptic modulator constitution which provides high-bit-rate throughput. SOLUTION: This Mach-Zehnder electrooptic modulator includes three regions. A 1st region has a couple of isolated waveguides and is equipped with a ground electrode 76 arranged on a 2nd waveguide 64 and an RF electrode (hot electrode) which is arranged on a 1st waveguide 66 and carries a modulated signal. A 2nd transition region is arranged right behind the 1st region. An electrode structure moves to the 2nd region, the RF electrode 72 is arranged over the 2nd waveguide 64 nearby the exit point of the 2nd region, and the ground electrode 78 is arranged on the 1st waveguide 66. A 3rd region is arranged behind the 2nd region. The RF electrode 72 is held on the 2nd waveguide 64 and the ground electrode 78 is held on the 1st waveguide 66.

    METHOD OF ETCHING FERROELECTRIC MATERIAL
    9.
    发明专利
    METHOD OF ETCHING FERROELECTRIC MATERIAL 未知

    公开(公告)号：CA2385532A1

    公开(公告)日：2003-01-18

    申请号：CA2385532

    申请日：2002-05-08

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： JACOBSON DALE CONRAD ,  GILL DOUGLAS M

    IPC: G02B6/13 ,  G02B6/12 ,  G02B6/134 ,  G02B6/136 ,  G02F1/035 ,  C23F1/02

    Abstract: A method of etching a ferrolectric material is disclosed whereby a single layer of ions is implanted into a surface of the film and then, without first annealing the substrate, the material between that surface and the layer of ion implantation is etched away. Such a method has the benefit of being faster and much less costly as compared to prior art methods. A single ion implantation of sufficient energy causes a high level of electronic damage near the surface of the material and a high level of crystalline damage at the ion implant level. While it is well known that crystalline damage greatly increases the etch rate of a ferroelectric material, the inventors have discovered that the aforementioned electronic damage also substantially increases the etch rate of the material. Since damaged lithium niobate etches at a much faster rate then undamaged lithium niobate, no annealing is necessary to create an etch stop. Additionally, since there is sufficient damage, either electronic or nuclear, continuously from the surface of the material to the implant layer, multiple ion layer implantations are not necessary.

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