公开(公告)号：EP0965569B1

公开(公告)日：2005-08-31

申请号：EP99304078.1

申请日：1999-05-26

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Marszalek, Stanley F. ,  Nelson, Katherine Theresa ,  Walker, Kenneth Lee ,  Womack, Kim Willard ,  Yan, Man Fei

IPC: C03B37/018

CPC classification number: C03B37/01815

公开(公告)号：EP0965569A1

公开(公告)日：1999-12-22

申请号：EP99304078.1

申请日：1999-05-26

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Marszalek, Stanley F. ,  Nelson, Katherine Theresa ,  Walker, Kenneth Lee ,  Womack, Kim Willard ,  Yan, Man Fei

IPC: C03B37/018

CPC classification number: C03B37/01815

Abstract: The deposition rate of MCVD processes is enhanced by applying to the outside of the deposition tube (101) at least a first (107) and a second (103) independently controlled heat source to a plurality of reactant vapours flowing in the tube which are used to form deposited particulate matter on the inside of the tube (101). The first heat source (107) is adjusted so as to provide at least a specified rate of reaction for the reactants, and the second source (103) is adjusted so as to provide at least a specified deposition rate on the inside of the tube (101) for the particulate matter formed by the chemical vapour reaction.

Abstract translation: MCVD工艺的沉积速率是通过施加到沉积管（101）至少具有第一（107）和第二（103）unabhängig控制加热源的外部，以反应物蒸气在管中流动的多元使用哪些增强 以在管（101）的内部沉积的微粒物质。 第一热源（107）被调整，以提供至少在反应物反应的特定的速率，并且所述第二源（103）被调整，以在管的内侧提供至少一个指定的沉积速率（ 101），用于通过化学气相反应形成的颗粒物质。