公开(公告)号：EP1724918A1

公开(公告)日：2006-11-22

申请号：EP06113244.5

申请日：2006-04-27

Applicant: M/A-COM, INC.

Inventor： Helms, David Richard ,  Point, Jr., Robert Warren

IPC: H03F3/191 ,  H03F3/45 ,  H03F3/60

CPC classification number: H03F3/191 ,  H03F3/45089 ,  H03F3/604 ,  H03F2200/153 ,  H03F2203/45638 ,  H03F2203/45644

Abstract: A high-power, high frequency (1- 100 GHz) power amplifier (18), made using SiGe transistors. A differential common-emitter amplifier section supplies the voltage amplification, allowing the total voltage swing of the amplifier to be twice the breakdown voltage of the individual transistors (T 1 -T 4 ). Current amplification is supplied by a differential common-base amplifier section, connected in cascode with the differential common-emitter amplifier section. Appropriately chosen resonators in the cascode connection resonate out the Miller effect, negative current feed back of the circuit at the amplifier's operational frequency, allowing the amplifier to provide high power output at the operational frequency.

Abstract translation: 使用SiGe晶体管制造的高功率，高频（1- 100 GHz）功率放大器（18）。 差分共发射极放大器部分提供电压放大，允许放大器的总电压摆幅为单个晶体管（T 1 -T 4）的击穿电压的两倍。 电流放大由差分共基放大器部分提供，与差分共发射极放大器部分共模连接。 在共源共栅连接中适当选择的谐振器在放大器工作频率下谐振了米勒效应，负电流反馈电路，允许放大器在工作频率下提供高功率输出。