公开(公告)号：CA1279155C

公开(公告)日：1991-01-22

申请号：CA523167

申请日：1986-11-17

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN J ,  SPENCER ALLEN C

IPC: G03F7/40 ,  G03C5/00

Abstract: THERMALLY STABILIZED PHOTORESIST IMAGES Photo resist image layers, particularly those used for high resolution geometries in microelectronic applications, are stabilized against distortion or degradation by the heat generated during subsequent etching, ion implantation processes and the like, by the application of a film of a thermally stabilizing agent prior to postdevelopment bake of the image layer. The process serves to achieve thermal stabilization of the photoresist image layer without significantly affecting the ease of subsequent stripping of the layer. It is particularly effective when used to thermally stabilize positive resist images derived from photoresist systems based on novolak resins.

公开(公告)号：ZA8608746B

公开(公告)日：1987-06-24

申请号：ZA8608746

申请日：1986-11-18

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN J ,  SPENCER ALLEN C

IPC: G03F7/40 ,  G03F ,  H01L ,  H05K

CPC classification number: G03F7/40

公开(公告)号：AU6629286A

公开(公告)日：1987-07-01

申请号：AU6629286

申请日：1986-11-12

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN J ,  SPENCER ALLEN C

IPC: G03F7/40 ,  G03C5/00

公开(公告)号：ZA868746B

公开(公告)日：1987-06-24

申请号：ZA868746

申请日：1986-11-18

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN J ,  SPENCER ALLEN C

IPC: G03F7/40 ,  G03F ,  H01L ,  H05K

Abstract: Photo resist image layers, particularly those used for high resolution geometries in microelectronic applications, are stabilized against distortion or degradation by the heat generated during subsequent etching, ion implantation processes and the like, by the application of a film of a thermally stabilizing agent prior to post-development bake of the image layer. The process serves to achieve thermal stabilization of the photoresist image layer without significantly affecting the ease of subsequent stripping of the layer. It is particularly effective when used to thermally stabilize positive resist images derived from photoresist systems based on novolak resins.

公开(公告)号：EP0247153A4

公开(公告)日：1988-05-19

申请号：EP86907168

申请日：1986-11-12

Applicant: MACDERMID INC

Inventor： GRUNWALD JOHN J ,  SPENCER ALLEN C

IPC: G03F7/40

CPC classification number: G03F7/40

Abstract: Photoresist image layers, particularly those used for high resolution geometries in microelectronic applications, are stabilized against distortion or degradation by the heat generated during subsequent etching, ion implantation processes and the like, by the application of a film of a thermally stabilizing agent prior to postdevelopment bake of the image layer. The process serves to achieve thermal stabilization of the photoresist image layer without significantly affecting the ease of subsequent stripping of the layer. It is particularly effective when used to thermally stabilize positive resist images derived from photoresist systems based on novolak resins.