公开(公告)号：EP3089218A4

公开(公告)日：2017-01-04

申请号：EP14875016

申请日：2014-12-22

Applicant: MAT CONCEPT INC

Inventor： KOIKE JUNICHI ,  SUTOU YUJI ,  ANDO DAISUKE ,  HOANG TRI HAI

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022466 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1884 ,  Y02E10/547

Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate (1) and is provided with a metal oxide layer (100) that is formed on the silicon substrate and wiring (10) that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.