公开(公告)号：EP3166372A4

公开(公告)日：2017-08-02

申请号：EP15821293

申请日：2015-07-10

Applicant: MAT CONCEPT INC

Inventor： KOIKE JUNICHI ,  ANDO DAISUKE ,  SUTOU YUJI

IPC: H05K3/38 ,  H01G2/06 ,  H01L31/0224 ,  H05K1/09

CPC classification number: H05K1/09 ,  H01G2/06 ,  H01G4/008 ,  H05K1/0306 ,  H05K1/092 ,  H05K1/11 ,  H05K3/10 ,  H05K3/388 ,  H05K3/389 ,  H05K3/4007 ,  H05K2201/0269 ,  H05K2201/0272 ,  H05K2203/086 ,  H05K2203/087

Abstract: To provide: an electronic component which comprises a copper electrode on an inorganic material substrate and wherein the adhesion strength between the substrate and the copper electrode is high, thereby achieving improved adhesion of the copper electrode; and a method for manufacturing this electronic component. An electronic component which comprises a copper electrode on an inorganic material substrate and wherein an interface layer containing copper, manganese, silicon and oxygen is provided at the interface between the substrate and the copper electrode, and the interface layer contains crystal grains that are mainly formed of copper and dispersed in the interface layer. A method for manufacturing this electronic component comprises: an interface layer formation step for forming an interface layer on the substrate; and an electrode formation step for forming the copper electrode on the interface layer.

Abstract translation: 本发明提供一种电子部件，该电子部件在无机材料基板上具有铜电极，该基板与铜电极之间的密合强度高，能够提高铜电极的密合性。 以及该电子部件的制造方法。 一种电子部件，在无机材料基板上具有铜电极，在基板和铜电极的界面设置含有铜，锰，硅和氧的界面层，界面层含有主要形成的晶粒 的铜并分散在界面层中。 该电子部件的制造方法包括：界面层形成工序，在基板上形成界面层; 以及用于在界面层上形成铜电极的电极形成步骤。

公开(公告)号：EP3153254A4

公开(公告)日：2017-07-19

申请号：EP15810529

申请日：2015-06-02

Applicant: MAT CONCEPT INC

Inventor： KOIKE JUNICHI ,  SUTOU YUJI ,  ANDO DAISUKE

IPC: B22F3/10 ,  B05D3/02 ,  B05D3/04 ,  H01B1/00 ,  H01B1/22 ,  H01B5/02 ,  H01B5/14 ,  H01B13/00 ,  H01L21/48 ,  H05K3/12

CPC classification number: H05K3/1291 ,  B05D3/02 ,  B05D3/04 ,  B22F1/0048 ,  B22F3/10 ,  B22F3/1007 ,  B22F3/1017 ,  B22F2001/0066 ,  B22F2998/10 ,  B22F2999/00 ,  H01B1/00 ,  H01B1/22 ,  H01B5/02 ,  H01B5/14 ,  H01B13/00 ,  H01L21/4867 ,  H05K2203/1157 ,  H05K2203/1476 ,  B22F9/08 ,  B22F2009/0828 ,  B22F2201/02 ,  B22F2201/03 ,  B22F2201/01 ,  B22F2201/013

公开(公告)号：EP3089218A4

公开(公告)日：2017-01-04

申请号：EP14875016

申请日：2014-12-22

Applicant: MAT CONCEPT INC

Inventor： KOIKE JUNICHI ,  SUTOU YUJI ,  ANDO DAISUKE ,  HOANG TRI HAI

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022466 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1884 ,  Y02E10/547

Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate (1) and is provided with a metal oxide layer (100) that is formed on the silicon substrate and wiring (10) that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.