公开(公告)号：US3740617A

公开(公告)日：1973-06-19

申请号：US3740617D

申请日：1969-11-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO I ,  MIYAI Y ,  NAKASHIMA S ,  IWASA H

IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/06 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L25/03 ,  H01L23/36 ,  H01L29/00 ,  H01L29/0657 ,  H01L2224/4847 ,  H01L2224/48491

Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.

Abstract translation: 一种半导体结构及其制造方法，其中在单个基板上以规则间隔的关系形成至少三个台面半导体单元，并且散热器附接到每个单元的台面表面，从而稳定并确保 散热器，并且获得显着改善的散热性能。 该结构对于诸如微波产生雪崩二极管的大的热损失半导体是有用的。

公开(公告)号：US3742315A

公开(公告)日：1973-06-26

申请号：US3742315D

申请日：1971-10-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO G ,  HASEGAWA H ,  IIZUKA M ,  FUJIWARA S ,  TERAMOTO I ,  IWASA H

IPC: H01L21/306 ,  H01L23/485 ,  H01L29/00 ,  H01L29/872 ,  H01L5/02 ,  H01L7/50 ,  H01L7/60

CPC classification number: H01L29/872 ,  H01L21/30608 ,  H01L23/4855 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/051 ,  Y10S148/102 ,  Y10S148/115 ,  Y10S148/139 ,  H01L2924/00

Abstract: A semiconductor device having a Schottky barrier junction formed in the bottom of a polygonal recess on a surface of a semiconductor substrate comprises an undercut in the recess beneath an insulating mask formed on the substrate, and a metal passing through the mask and extending to the bottom of the recess for forming said junction. The undercut provides an enclosed spacing encircling the junction portion of said metal and said semiconductor, thereby improving the backward breakdown voltage characteristic therein.

公开(公告)号：US3730800A

公开(公告)日：1973-05-01

申请号：US3730800D

申请日：1969-12-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKASHIMA S ,  INOUE M ,  IWASA H

IPC: H01L21/00 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/316 ,  H01L27/00 ,  H01L29/00 ,  H01L7/50

CPC classification number: H01L27/00 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/31612 ,  H01L29/00

Abstract: A METHOD OF MAKING A GERMANIUM MESA-TYPE SEMICONDUCTOR DEVICE BY MESA-ETCHING EMPLOYING AS AN ETCHING MASK, A FILM OF SIO2 APPLIED ONTO THE SURFACE OF A GERMANIUM SUBSTRATE. THE SIO2 FILM CAN BE FORMED BY THERMAL DECOMPOSITION OF ORGANO-OXY-SILANE SO AS TO HAVE A THICKNESS OF ABOUT 1000 TO ABOUT 7000 A. THE MESA-ETCHING CAN BE MADE EITHER BY ELECTROLYTIC ETCHING OR BY CHEMICAL ETCHING.

公开(公告)号：SE348319B

公开(公告)日：1972-08-28

申请号：SE1360369

申请日：1969-10-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： LIZUKA M ,  FUJIWARA S ,  KANO G ,  IWASA H ,  HASEGAWA H ,  TERAMOTO I

IPC: C23F1/02 ,  C23F1/40 ,  H01L21/00 ,  H01L21/306 ,  H01L23/485 ,  H01L29/47 ,  H01L29/872 ,  H01L7/50

公开(公告)号：BR6914217D0

公开(公告)日：1973-04-19

申请号：BR21421769

申请日：1969-11-14

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO I ,  MIYAI Y ,  NAKASHIMA S ,  IWASA H

IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/06

Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.

公开(公告)号：SE339515B

公开(公告)日：1971-10-11

申请号：SE1572768

申请日：1968-11-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA M ,  IWASA H

IPC: H01L21/316 ,  H01L23/31 ,  H01L1/10

Abstract: 1,246,456. Mixed oxide, SiO 2 /TiO 2 , coating. MATSUSHITA ELECTRONICS CORP. 8 Nov. 1968 [22 Nov., 1967], No. 53067/68. Heading C1A. [Also in Division Hl] A PN junction device has a passivating layer including titanium dioxide and silica and containing 5-30% by volume of titanium dioxide. The layer may be homogeneous in which case it can be deposited by pyrolysis of a mixture of tetraethoxysilane and tetra-isopropyltitanate. The mixture, with some oxygen, is carried in a current of nitrogen or argon over the semiconductor surface which is maintained at 250- 500‹ C. Alternatively the layer may consist of a silica layer covered with titania, with or without an intervening layer of a mixture of the two oxides.

公开(公告)号：BR6912979D0

公开(公告)日：1973-01-11

申请号：BR21297969

申请日：1969-10-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： IISUKA M ,  FUJIWARA S ,  KANO G ,  IWASA H ,  HASEGAWA H ,  TERAMOTO I

IPC: C23F1/02 ,  C23F1/40 ,  H01L21/00 ,  H01L21/306 ,  H01L23/485 ,  H01L29/47 ,  H01L29/872 ,  H01L7/50

公开(公告)号：SE349188B

公开(公告)日：1972-09-18

申请号：SE1593969

申请日：1969-11-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO I ,  MIYAI Y ,  NAKASHIMA S ,  IWASA H

IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/06 ,  H01L1/12

Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.