公开(公告)号：US3786319A

公开(公告)日：1974-01-15

申请号：US3786319D

申请日：1967-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TOMISABURO O

IPC: H01L23/485 ,  H01L29/06 ,  H01L29/78 ,  H01L19/00

CPC classification number: H01L29/7831 ,  H01L23/485 ,  H01L29/0642 ,  H01L29/0692 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A multi-polar insulated gate transistor having two or more isolated electrodes formed on an insulated film, and an island region having a conductivity type different from that of the semiconductor proper and located in the portion of the substrate beneath said film and below the gap between said electrodes, whereby a large current can flow through the element located closer to the drain when the respective elements which may consist of the pair, i.e., each gate and source-island, islandisland or island-drain are under identical voltage conditions.

Abstract translation: 一种多极绝缘栅极晶体管，其具有形成在绝缘膜上的两个或更多个隔离电极，以及岛状区域，其导电类型与半导体本体的导电类型不同，位于所述膜下方的基板部分之下， 所述电极，由此，当可以由一对组成的各个元件即每个栅极和源极岛，岛状岛或岛状漏极处于相同的电压条件下时，大的电流可流过位于更靠近漏极的元件。