公开(公告)号：SE360772B

公开(公告)日：1973-10-01

申请号：SE1700669

申请日：1969-12-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO G ,  YOKOSAWA M ,  KAWASAKI T ,  FUJIWARA S ,  HASEGAWA H

IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  H01C9/06

Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the "off" or "on" state, corresponding to the applied stress.