公开(公告)号：US20040020782A1

公开(公告)日：2004-02-05

申请号：US10434103

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley ,  Vacit Arat ,  Christopher J. Lee

IPC: C25D005/02

CPC classification number: B81C1/00293 ,  B33Y10/00 ,  B81B2201/042 ,  B81C2203/0145 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

Abstract: In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

Abstract translation: 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20040007468A1

公开(公告)日：2004-01-15

申请号：US10434497

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Dale S. McPherson

IPC: C25D005/02

CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/042 ,  B81C1/00476 ,  B81C2201/014 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

Abstract: Multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching Operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching Operations may be separated by intermediate post processing activities, they may be separated by cleaning Operations, or barrier material removal Operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Abstract translation: 多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望结构的牺牲材料（例如铜）制成。 在结构形成之后，通过多级蚀刻操作去除牺牲材料。 在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。 多级蚀刻操作可以通过中间后处理活动分开，它们可以通过清洁操作或阻隔材料去除操作等分开。 障碍物可以通过与结构材料或基底接触而固定在适当的位置，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留的牺牲材料被蚀刻之后可以被自由地去除。

公开(公告)号：US20030127336A1

公开(公告)日：2003-07-10

申请号：US10271574

申请日：2002-10-15

Applicant: MEMGen Corporation

Inventor： Adam L. Cohen ,  Gang Zhang ,  Qui T. Le ,  Michael S. Lockard ,  Dennis R. Smalley

IPC: C25D005/02

CPC classification number: B81C1/0038 ,  B33Y10/00 ,  B81C1/00619 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D7/12 ,  C25D17/02 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/76885 ,  H05K3/241

Abstract: Various embodiments of the invention present techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion (ELEXnull) process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the ELEXnull process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of EFABnull.

公开(公告)号：US20040004002A1

公开(公告)日：2004-01-08

申请号：US10434493

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

IPC: C25D005/02

CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2201/019

Abstract: Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are form from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurs during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

Abstract translation: 多层结构在临时的（例如导电的）衬底上电化学地制造，然后在永久（例如电介质，图案化，多材料或其他功能）的衬底上结合并从临时衬底去除。 在一些实施例中，结构由顶层到底层形成，使得结构的底层变得粘附到永久性基底上，而在其它实施例中，结构是从底层到顶层形成的，然后是双层衬底交换 发生。 永久性基材可以是与层状结构结合的固体（例如通过粘合剂），或者可以作为在凝固期间发生结合而在结构的一部分附近凝固的可流动材料开始。 多层结构可以在附着永久性基底之前从牺牲材料上释放，或者在附着后可以释放多层结构。

公开(公告)号：US20030183008A1

公开(公告)日：2003-10-02

申请号：US10313795

申请日：2002-12-06

Applicant: MEMGen Corporation

Inventor： Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  John D. Evans

IPC: G01P015/00

CPC classification number: B81C1/0019 ,  B33Y10/00

Abstract: Various embodiments of the invention are directed to various microdevices including sensors, actuators, valves, scanning mirrors, accelerometers, switches, and the like. In some embodiments the devices are formed via electrochemical fabrication (EFABnull)

Abstract translation: 本发明的各种实施例涉及包括传感器，致动器，阀，扫描反射镜，加速度计，开关等的各种微型装置。 在一些实施例中，通过电化学制造（EFAB TM）形成器件，

公开(公告)号：US20040140862A1

公开(公告)日：2004-07-22

申请号：US10607931

申请日：2003-06-27

Applicant: MEMGen Corporation

Inventor： Elliott R. Brown ,  John D. Evans ,  Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley ,  Morton Grosser

IPC: H01P005/22 ,  H01P001/18

CPC classification number: B81C1/00126 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/0292 ,  B81C2201/0109 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H01Q3/40 ,  H01Q21/0006 ,  H01Q21/065 ,  H05K3/4647

Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

Abstract translation: 提供RF和微波辐射引导或控制部件，其可以是单片的，其可以由多个电沉积操作和/或从多个沉积的材料层形成，其可以包括开关，电感器，天线，传输线，滤波器 ，混合耦合器，天线阵列和/或其他主动或无源部件。 部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。 优选的形成方法使用电化学制造技术（例如包括选择性沉积，体积沉积，蚀刻操作和平坦化操作）和后沉积工艺（例如选择性蚀刻操作和/或反向填充操作）。

公开(公告)号：US20030222738A1

公开(公告)日：2003-12-04

申请号：US10309521

申请日：2002-12-03

Applicant: MEMGen Corporation

Inventor： Elliott R. Brown ,  John D. Evans ,  Christopher A. Bang ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley ,  Morton Grosser

IPC: H01P001/10 ,  C25D017/00 ,  H01P001/202 ,  H01Q011/10 ,  H01P003/06

CPC classification number: H01P1/202 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/042 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49002 ,  Y10T29/49016 ,  Y10T29/49018

Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

Abstract translation: 提供RF和微波辐射引导或控制部件，其可以是单片的，其可以由多个电沉积操作和/或从多个沉积的材料层形成，其可以包括开关，电感器，天线，传输线，滤波器 ，和/或其他主动或被动部件。 部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。 优选的形成方法使用电化学制造技术（例如包括选择性沉积，体积沉积，蚀刻操作和平坦化操作）和后沉积工艺（例如选择性蚀刻操作和/或反向填充操作）。