公开(公告)号：WO1997049116A1

公开(公告)日：1997-12-24

申请号：PCT/US1997008978

申请日：1997-05-28

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  CASELLA, Robert, A. ,  LIBBY, Charles, J. ,  RATHMELL, Gary, P.

IPC: H01J37/30

CPC classification number: H01J37/3178 ,  H01J37/3002 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744

Abstract: Apparatus and method of an improved gas delivery system for delivering reactant material to a workpiece, such as a substrate, being operated on by a particle beam employs a shroud-type concentrator having an interior axial passage. Fluid reactant material is supplied to the axial passage for delivery to the workpiece. A particle beam can traverse the axial passage for impingement on the workpiece surface, concurrently if desired with the reactant delivery.

Abstract translation: 用于将反应物材料输送到由颗粒束操作的工件（例如基底）的改进的气体输送系统的装置和方法采用具有内部轴向通道的护罩型浓缩器。 将流体反应物材料供应到轴向通道以输送到工件。 粒子束可以穿过轴向通道以冲击在工件表面上，同时如果需要，反应物输送。

公开(公告)号：WO1997040493A1

公开(公告)日：1997-10-30

申请号：PCT/US1997006158

申请日：1997-04-16

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  LIBBY, Charles, J. ,  YANSEN, Donald, E. ,  ATHAS, Gregory, J. ,  HILL, Raymond ,  MELLO, Russell

IPC: G11B05/187

CPC classification number: G11B5/3967 ,  G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  H01J37/3056 ,  H01J2237/30438 ,  Y10S430/143 ,  Y10T428/11 ,  Y10T428/1186

Abstract: In one embodiment, the invention is understood as a focused particle beam system (10) that includes a pattern recognition element (54) and that employs the pattern recognition element to image and analyze the pole-tip assembly (100) footprint (114A, 114B, 114C) of a recording head and that employs a processor (52) to generate instruction signals that direct a focused particle beam (20) to remove selected portions of the recording head (30) and thereby shape the pole-tip assembly of the recording head. The focused particle beam system provides a precision milling device that can employ the coordinate information to mill selectively the recording head and thereby shape the geometry of the pole-tip assembly footrint, including geometries that have contoured surfaces.

Abstract translation: 在一个实施例中，本发明被理解为包括图案识别元件（54）的聚焦粒子束系统（10），并且使用图案识别元件来对极尖组件（100）占地面积（114A，114B）进行成像和分析 ，114C），并且采用处理器（52）产生指示聚焦的粒子束（20）去除所述记录头（30）的所选部分的指令信号，从而使所述记录头的极尖组件成形 头。 聚焦的粒子束系统提供了一种精密铣削装置，其可以使用坐标信息来选择性地磨削记录头，并由此形成极尖组件脚印的几何形状，包括具有轮廓表面的几何形状。

公开(公告)号：WO1997038355A1

公开(公告)日：1997-10-16

申请号：PCT/US1997005742

申请日：1997-04-07

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  CASEY, J., David, Jr. ,  STEWART, Diane, K. ,  SUNDARAM, Ganesh ,  DOYLE, Andrew, F.

IPC: G03F01/00

CPC classification number: G03F1/72 ,  G03F1/26 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/31608

Abstract: The present invention provides systems and methods for the water-based deposition of silicon dioxide films. In one aspect, the invention provides methods for depositing a dielectric material to the surface of a workpiece. The workpiece can be, for example, an integrated circuit, a phase shift mask, or any other device that has features suitable for processing by a focused ion beam system. The method for depositing the dielectric material includes the steps of providing a chamber that has an interior portion with a stage element for holding the workpiece and that also includes an injection element for introducing reactant material into that interior portion, introducing through the injection elements a silicon-containing reactant material, introducing through the injection element a water-containing reactant material, and passing an ion beam through the interior portion and to the surface of the workpiece for depositing the dielectric material thereon. The process of the invention is suitable for focused ion beam induced deposition of a silicon dioxide film on top of an integrated circuit for forming an insulated layer or for depositing a silicon dioxide film on a phase shift mask for repairing a defect in the mask such as a bump or a void.

Abstract translation: 本发明提供了用于二氧化硅膜的水基沉积的系统和方法。 一方面，本发明提供了将电介质材料沉积到工件的表面上的方法。 工件可以是例如集成电路，相移掩模或具有适合于聚焦离子束系统处理的特征的任何其它器件。 沉积电介质材料的方法包括以下步骤：提供具有内部部分的室，其具有用于保持工件的载物台元件，并且还包括用于将反应物材料引入该内部部分的注入元件，通过注入元件引入硅 通过注射元件引入含水反应物质，并使离子束通过内部部分和工件表面，以沉积其上的电介质材料。 本发明的方法适用于在用于形成绝缘层的集成电路的顶部上的聚焦离子束感应沉积二氧化硅膜或用于在相位掩模上沉积二氧化硅膜以修复掩模中的缺陷，例如 一个碰撞或一个空白。

公开(公告)号：WO1992019006A1

公开(公告)日：1992-10-29

申请号：PCT/US1992002630

申请日：1992-03-30

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  EDWARDS, David, Jr. ,  WARD, Billy, W.

IPC: H01J37/30

CPC classification number: H01J37/045 ,  H01J2237/028

Abstract: Ion beam apparatus provides beam blanking by utilizing an aperture through which the beam passes during unblanked periods, and elements (14, 15) for deflecting the beam during blanking so that the beam is deflected away from the aperture. Electrodes (42, 44, 50) between the aperture element (16) and the deflecting elements (14, 15) generate a potential exceeding the kinetic energy of charged particles emitted from the aperture element due to ions striking the aperture element during blanking. Charged particles emitted from the aperture element are thus prevented from striking the beam deflecting elements, thereby reducing hydrocarbon cracking, insulator accumulation, and charge accumulation on the deflecting elements. Beam stability is thereby enhanced. Charged particles emitted from the aperture element are also returned to the aperture element, so that an accurate measure of ion beam current is obtained by measuring current flow to the aperture element.

公开(公告)号：WO1989008322A1

公开(公告)日：1989-09-08

申请号：PCT/US1989000520

申请日：1989-02-09

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  WARD, Billy, W. ,  WARD, Michael, L.

IPC: H01J37/305

CPC classification number: H01J37/3005 ,  H01J37/3056

Abstract: Ion beam machining apparatus utilizes a focused ion beam for sputtering a target, an electron source for charge neutralization of the target, photon detectors for detecting photo-emissions during sputtering, and an output module responsive to the photon detectors for locating the impingement site of the ion beam within the target, based on detection of transitions between different material constituents within the target. The focused ion beam can be scanned in selected patterns about a predetermined sputtering region of the target, and the output module can include imaging elements for generating an image of the target in response to detected photo-emissions.