公开(公告)号：WO1997038355A1

公开(公告)日：1997-10-16

申请号：PCT/US1997005742

申请日：1997-04-07

Applicant: MICRION CORPORATION

Inventor： MICRION CORPORATION ,  CASEY, J., David, Jr. ,  STEWART, Diane, K. ,  SUNDARAM, Ganesh ,  DOYLE, Andrew, F.

IPC: G03F01/00

CPC classification number: G03F1/72 ,  G03F1/26 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/31608

Abstract: The present invention provides systems and methods for the water-based deposition of silicon dioxide films. In one aspect, the invention provides methods for depositing a dielectric material to the surface of a workpiece. The workpiece can be, for example, an integrated circuit, a phase shift mask, or any other device that has features suitable for processing by a focused ion beam system. The method for depositing the dielectric material includes the steps of providing a chamber that has an interior portion with a stage element for holding the workpiece and that also includes an injection element for introducing reactant material into that interior portion, introducing through the injection elements a silicon-containing reactant material, introducing through the injection element a water-containing reactant material, and passing an ion beam through the interior portion and to the surface of the workpiece for depositing the dielectric material thereon. The process of the invention is suitable for focused ion beam induced deposition of a silicon dioxide film on top of an integrated circuit for forming an insulated layer or for depositing a silicon dioxide film on a phase shift mask for repairing a defect in the mask such as a bump or a void.

Abstract translation: 本发明提供了用于二氧化硅膜的水基沉积的系统和方法。 一方面，本发明提供了将电介质材料沉积到工件的表面上的方法。 工件可以是例如集成电路，相移掩模或具有适合于聚焦离子束系统处理的特征的任何其它器件。 沉积电介质材料的方法包括以下步骤：提供具有内部部分的室，其具有用于保持工件的载物台元件，并且还包括用于将反应物材料引入该内部部分的注入元件，通过注入元件引入硅 通过注射元件引入含水反应物质，并使离子束通过内部部分和工件表面，以沉积其上的电介质材料。 本发明的方法适用于在用于形成绝缘层的集成电路的顶部上的聚焦离子束感应沉积二氧化硅膜或用于在相位掩模上沉积二氧化硅膜以修复掩模中的缺陷，例如 一个碰撞或一个空白。