公开(公告)号：WO2021145907A1

公开(公告)日：2021-07-22

申请号：PCT/US2020/021542

申请日：2020-03-06

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： GENDRON-HANSEN, Amaury ,  ODEKIRK, Bruce

IPC: H01L21/265 ,  H01L21/329 ,  H01L21/336 ,  H01L29/872 ,  H01L29/78 ,  H01L29/08 ,  H01L21/02274 ,  H01L21/02293 ,  H01L21/02378 ,  H01L21/02579 ,  H01L21/046 ,  H01L21/0465 ,  H01L21/0475 ,  H01L21/67075 ,  H01L27/0927 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7802

Abstract: A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.

公开(公告)号：WO2020247013A1

公开(公告)日：2020-12-10

申请号：PCT/US2019/061857

申请日：2019-11-15

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： GENDRON-HANSEN, Amaury ,  SDRULLA, Dumitru

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/12 ,  H01L21/336

Abstract: A high-voltage termination for a semiconductor device includes a substrate, an implanted device region, a shallow trench adjacent to the implanted device region, and a doped extension region between the implanted device region and a first edge of the shallow trench adjacent to the implanted device region. A junction termination extension region is formed in the shallow trench contacting the extension region and extending past a second edge of the shallow trench opposite the implanted device region. An insulating layer is formed over at least a portion of the extension region and over the junction termination extension region. A metal layer is formed over the insulating layer.