公开(公告)号：WO2020247013A1

公开(公告)日：2020-12-10

申请号：PCT/US2019/061857

申请日：2019-11-15

Applicant: MICROCHIP TECHNOLOGY INC.

Inventor： GENDRON-HANSEN, Amaury ,  SDRULLA, Dumitru

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/12 ,  H01L21/336

Abstract: A high-voltage termination for a semiconductor device includes a substrate, an implanted device region, a shallow trench adjacent to the implanted device region, and a doped extension region between the implanted device region and a first edge of the shallow trench adjacent to the implanted device region. A junction termination extension region is formed in the shallow trench contacting the extension region and extending past a second edge of the shallow trench opposite the implanted device region. An insulating layer is formed over at least a portion of the extension region and over the junction termination extension region. A metal layer is formed over the insulating layer.