Abstract:
The present invention relates to a microcontroller that may be configured to operate without the accompaniment of any external component. The microcontroller can function in a proper manner from the application of only power and signal lines with no external component required. The microcontroller (10) has integrated internal reset (14) and oscillator (16) circuitry into the microcontroller. The microcontroller has also integrated simple external components such as current limiting resistors into the microcontroller.
Abstract:
A microcontroller circuit (10) includes an oscillator (14) receiving frequency trimming data (28) from a memory (16) under control of a microcontroller logic (12). The microcontroller logic (12) permits a user to alter the trimming data and to select through an oscillator logic (20) either the oscillator (14) or an external oscillator source (34) as a system clock (32).
Abstract:
The invention relates to a configurable IC device pin (14), which may be either a device clock input pin or a digital I/O pin in one embodiment, or a reset pin or a digital I/O pin in another embodiment. Both embodiments use a memory device (16) to store configuration data for the pin. Input/output logic (18) is also used in both embodiments to transfer data to and from the IC pin (14) when configured as a digital I/O pin.
Abstract:
The present invention relates to a microcontroller that may be configured to operate without the accompaniment of any external components. The microcontroller can function in a proper manner from the application of only power and signal lines with no external components required. The microcontroller (10) has integrated internal reset (14) and oscillator (16) circuitry into the microcontroller. The microcontroller has also integrated simple external components such as current limiting resistors and pull up and pull down resistors into the microcontroller in order to avoid application specific external components.
Abstract:
A power-on reset circuit (10) for resetting electronic circuitry to be monitored has been provided. The power-on reset circuit includes a trip point generator (12) including the worst case component (the component that requires the greatest power supply voltage to operate) within the electronic circuitry for setting the threshold voltatge for taking the electronic circuitry out of reset such that if the worst case component is operative, it is guaranteed that all components are operative and, thus, the electronic circuitry can be taken out of reset. Moreover, because the threshold voltage is based upon the worst case component of the electronic circuitry, the threshold voltage of the trip point generator will adequately track the electronic circuitry over normal process and temperature variations. Additionally, the power-on reset circuit includes a noise filter (34) for placing the electronic circuitry back into reset if variations within the power supply voltage cause the power supply voltage level to fall below a predetermined threshold for at least a minimum period of time.
Abstract:
A technique for reading data from a selected memory element (25) of an EPROM array having rows (28) and columns (30) with addressable memory elements which may be selectively accessed at respective intersections of the rows and columns. Each memory element (25) includes a transistor having gate (27), source (29), and drain (30) electrodes, and after selection of a particular element from which data is to be read by appropriately biasing the row and column associated with that memory element, the source (29) electrode thereof is selectively connected to ground by a switching element (33) to allow current flow through the source-drain path of the memory element and enable the read out of data therefrom after the drain and gate voltages of the memory element (25) have been stabilized.
Abstract:
A voltage level shifting complementary metal-oxide-silicon (CMOS) buffer (30-47) is arranged and configured to operate in two distinct modes - one of which is high voltage and the other low voltage - depending on the level of the supply voltage (40) to the buffer relative to the operating voltage (VDD) of a device in which the buffer is integrated. In the high voltage mode, in which the supply voltage level exceeds the operating voltage level, the buffer is constrained to perform as a high voltage level shifter. In the low voltage mode, in which the supply voltage level is equal to or less than the operating voltage level, the buffer is constrained to perform as a CMOS logic gate.
Abstract:
A method of high speed reading of data from an EPROM, in which a memory array (12) is programmed based on device status at intersections of rows and columns of the array to store data therein as 0's and 1's, uses a capacitive overcharging and discharging technique to enable fast voltage stabilization without drawing significant current. A row containing memory element (25) to be read is quickly overdriven to overcharge an effective capacitance associated with the row to substantially the maximum level of the EPROM supply voltage (Vdd) which may exceed the programmed threshold voltage of the selected memory element (25). The effective capacitance is thereupon discharged to voltage level below both the maximum level of the supply voltage (Vdd) and the programmed threshold. Then the status and data content of the selected memory element (25) are read by first grounding an electrode of a source-drain path of the transistor comprising the memory element (25) to cause current with substantially no DC component to flow through that path of the transistor. A sense amplifier (17) in source-drain path of the transistor is triggered to detect current flow therethrough as indicative of the data content of the memory element (25).
Abstract:
The present invention relates to a microcontroller that may be configured to operate without the accompaniment of any external component. The microcontroller can function in a proper manner from the application of only power and signal lines with no external component required. The microcontroller (10) has integrated internal reset (14) and oscillator (16) circuitry into the microcontroller. The microcontroller has also integrated simple external components such as current limiting resistors into the microcontroller.
Abstract:
A technique is disclosed for reading a memory element (25) of an EPROM array (12) embedded in a microcontroller chip (10) which has been scaled down from a previous design by virtue of reduced line widths of a process technology used for fabricating the chip. The microcontroller chip (10) has a predetermined supply voltage (40), and the array (12) comprises rows and columns of addressable memory elements (12) which may be selectively accessed to read data content therefrom in a low voltage mode in which the supply voltage initially rises and ultimately reaches substantially its maximum voltage during a read cycle. A regulated reference voltage (Vref) is used to exercise row and column control in the low voltage read mode by tracking the level of the supply voltage up to a certain preselected level below the maximum supply voltage (Vdd), and by clamping the row and column control voltage at substantially the preselected level despite increases in the level of the supply voltage above the preselected level.