公开(公告)号：WO1997032340A1

公开(公告)日：1997-09-04

申请号：PCT/US1997002880

申请日：1997-02-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： MICRON TECHNOLOGY, INC. ,  GONZALEZ, Fernando ,  LOWREY, Tyler, A. ,  DOAN, Trung, Tri ,  TURI, Raymond, A. ,  WOLSTENHOLME, Graham, R.

IPC: H01L21/285

CPC classification number: H01L29/66136 ,  H01L27/0814 ,  H01L29/861 ,  Y10S257/91 ,  Y10S438/979

Abstract: A vertical diode is provided having a diode opening (24) extending through an insulation layer (20) and contacting an active region (18) on a silicon wafer (12). A titanium silicide layer (66) covers the interior surface (65) of the diode opening (24) and contacts the active region (18). The diode opening (24) is initially filled with an amorphous silicon plug (38) that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug (38) has a top portion (42) that is heavily doped with a first type dopant and a bottom portion (44) that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer (66). For one embodiment of the vertical diode, a programmable resistor contacts the top portion (42) of the silicon plug (38) and a metal line (48) contacts the programmable resistor.

Abstract translation: 提供了具有延伸穿过绝缘层（20）并接触硅晶片（12）上的有源区（18）的二极管开口（24）的垂直二极管。 钛硅化物层（66）覆盖二极管开口（24）的内表面（65）并接触有源区（18）。 二极管开口（24）最初填充有非晶硅塞（38），其在沉积期间被掺杂，随后被重结晶以形成大晶粒多晶硅。 硅插头（38）具有重掺杂有第一类型掺杂剂的顶部部分（42）和轻掺杂有第二类型掺杂剂的底部部分（44）。 顶部由底部界定，以便不与硅化钛层（66）接触。 对于垂直二极管的一个实施例，可编程电阻器接触硅插头（38）的顶部（42）并且金属线（48）接触可编程电阻器。