中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.021 seconds)

    METHOD OF BONDING TWO SUBSTRATES AND DEVICE MANUFACTURED THEREBY
    2.
    发明申请
    METHOD OF BONDING TWO SUBSTRATES AND DEVICE MANUFACTURED THEREBY 审中-公开
    结合两个基板的方法和由其制造的器件

    公开(公告)号：WO2013095147A1

    公开(公告)日：2013-06-27

    申请号：PCT/NL2012050922

    申请日：2012-12-21

    Applicant: MICRONIT MICROFLUIDICS BV

    Inventor： VAN T OEVER RONNY ,  BLOM MARKO THEODOOR ,  HANEVELD JEROEN ,  OONK JOHANNES ,  OLDE RIEKERINK MARINUS BERNARDUS ,  TIJSSEN PETER ,  TIGELAAR HENDRIK JAN HILDEBRAND ,  FEHR JEAN-NOEL ,  ROULET JEAN-CHRISTOPHE ,  GUPTA AMITAVA

    IPC: H01L23/10 ,  B81C1/00 ,  H01L21/50

    CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

    Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic,aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

    Abstract translation: 本发明涉及用于通过使用用于提供结合的中间薄膜金属层来结合例如由玻璃，硅，陶瓷，铝或硼制成的至少两个基板的方法，所述方法包括以下步骤：a） 提供所述两个衬底; b）在所述两个衬底中的第一衬底的至少一部分表面上沉积所述薄膜金属层; c）使第二衬底的表面与第一衬底的所述表面上的所述薄膜金属层接触，使得提供第二衬底和第一衬底上的薄膜金属层之间的结合; 以及d）至少局部地加强第二衬底和第一衬底上的薄膜金属层之间的结合。 本发明还涉及包括例如由玻璃，硅，陶瓷，铝或硼制成的两个基板和中间薄膜金属层的器件。

    METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE VIA IN A SUBSTRATE.
    4.
    发明专利
    METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE VIA IN A SUBSTRATE. 未知

    公开(公告)号：NL2009757C2

    公开(公告)日：2014-05-08

    申请号：NL2009757

    申请日：2012-11-05

    Applicant: MICRONIT MICROFLUIDICS BV

    Inventor： OEVER RONNY ,  BLOM MARKO THEODOOR ,  HANEVELD JEROEN ,  OONK JOHANNES ,  TIJSSEN PETER

    IPC: H01L21/48 ,  H01L21/683 ,  H01L23/14

    Abstract: A method for forming an electrically conductive via in a substrate that includes the steps of: forming a through hole in a first substrate; bringing a first surface of a second substrate into contact with the first surface of the first substrate, such that the through hole in the first substrate is covered by the first surface of the second substrate; filling the through hole in the first substrate with an electrically conductive material by electroplating to form the electrically conductive via, and removing the second substrate, wherein the first surface of the first and the second substrate each have a surface roughness Ra of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and the first surface of the first and the second substrate are brought in direct contact with each other, such that a direct bond is formed there between.

Patent Agency Ranking