公开(公告)号：WO2015013153A2

公开(公告)日：2015-01-29

申请号：PCT/US2014/047345

申请日：2014-07-21

Applicant: MICROSOFT CORPORATION

Inventor： DAVIS, John D. ,  STRAUSS, Karin ,  MANASSE, Mark Steven ,  GOPALAN, Parikshit S. ,  YEKHANIN, Sergey

IPC: G11C29/44

CPC classification number: G11C29/4401 ,  G11C13/0033 ,  G11C13/0035 ,  G11C13/0064 ,  G11C16/3404 ,  G11C16/3454 ,  G11C16/349 ,  G11C29/52 ,  G11C2029/0409

Abstract: A memory region can durably self-identify as being faulty when read. Information that would have been assigned to the faulty memory region can be assigned to another of that sized region in memory using a replacement encoding technique. For phase change memory, at least two fault states can be provided for durably self-identifying a faulty memory region; one state at a highest resistance range and the other state at a lowest resistance range. Replacement cells can be used to shift or assign data when a self-identifying memory fault is present. A memory controller and memory module, alone or in combination may manage replacement cell use and facilitate driving a newly discovered faulty cell to a fault state if the faulty cell is not already at the fault state.

Abstract translation: 存储器区域可读写时可以持续自我识别为故障。 可以使用替换编码技术将分配给故障存储器区域的信息分配给存储器中的该大小区域中的另一个。 对于相变存储器，可以提供至少两个故障状态用于持久地自我识别故障存储器区域; 一个状态处于最高电阻范围，另一个状态处于最低电阻范围。 当存在自我识别的存储器故障时，替换单元可用于移位或分配数据。 单独或组合的存储器控​​制器和存储器模块可以管理替换单元使用，并且如果故障单元尚未处于故障状态，则有助于将新发现的故障单元驱动到故障状态。