公开(公告)号：WO1998047702A1

公开(公告)日：1998-10-29

申请号：PCT/US1997021090

申请日：1997-11-18

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  WU, Xuanzhi ,  COUTTS, Timothy, J. ,  SHELDON, Peter ,  ROSE, Douglas, H.

IPC: B32B15/00

CPC classification number: C23C14/5806 ,  C03C17/00 ,  C23C14/0629 ,  C23C14/086 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543

Abstract: A photovoltaic device having a substrate, a layer of Cd2SnO4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd2SnO4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd2SnO4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd2SnO4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Abstract translation: 具有基板的光电器件，设置在作为前触点的所述基板上的Cd2SnO4层，设置在所述Cd2SnO4层上的两层或更多层半导体材料的薄膜和设置在所述半导体薄膜上的导电膜 材料以形成与所述薄膜的后电接触。 该器件通过将Cd 2 SnO 4层溅射到衬底上而形成，在半导体材料薄膜上沉积半导体材料薄膜到Cd2SnO4层上，并将导电膜沉积在半导体材料薄膜上。

公开(公告)号：WO2003017333A1

公开(公告)日：2003-02-27

申请号：PCT/US2002/011104

申请日：2002-04-02

Applicant: MIDWEST RESEARCH INSTITUTE ,  LI, Xiaonan ,  YAN, Yanfa ,  COUTTS, Timothy, J. ,  GESSERT, Timothy, A. ,  DEHART, Clay, M.

Inventor： LI, Xiaonan ,  YAN, Yanfa ,  COUTTS, Timothy, J. ,  GESSERT, Timothy, A. ,  DEHART, Clay, M.

IPC: H01L21/00

CPC classification number: C23C16/407 ,  H01L31/1884 ,  Y02E10/50

Abstract: A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber; and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Abstract translation: 一种不掺杂等离子体增强或高温的透明p型导电氧化物膜的制造方法，包括：a）将环境温度下的二烷基金属和载气中的饱和压力引入低压沉积室; 和b）在足以产生富含金属的条件以使NO分解和原子氮掺入形成的透明金属导电氧化物的环境下，将NO单独或与氧化剂一起引入室中。