METHOD FOR SILICON CARBIDE PRODUCTION
    1.
    发明申请
    METHOD FOR SILICON CARBIDE PRODUCTION 审中-公开
    碳化硅生产方法

    公开(公告)号:WO1994016994A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000528

    申请日:1994-01-21

    CPC classification number: C01B32/956 C01P2004/61 C01P2004/62

    Abstract: A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 DEG to 1000 DEG C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 DEG C to 1600 DEG C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

    Abstract translation: 描述了使用硅源材料和烃制造碳化硅颗粒的方法。 该方法是有效的,其特征是产量高。 细碎的硅源材料在400℃至1000℃的温度下与烃接触,其中烃热解并用碳涂覆颗粒。 然后将颗粒加热至1100℃至1600℃以引起成分之间的反应,形成非常小粒径的碳化硅。 不需要研磨碳化硅来获得小颗粒。 该方法可以作为间歇过程或连续过程进行。

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