AN EGFET PHOSPHATE SENSOR DEVICE
    3.
    发明申请
    AN EGFET PHOSPHATE SENSOR DEVICE 审中-公开
    EGFET磷酸盐传感器装置

    公开(公告)号:WO2016032314A1

    公开(公告)日:2016-03-03

    申请号:PCT/MY2015/000069

    申请日:2015-08-14

    Applicant: MIMOS BERHAD

    CPC classification number: G01N27/414

    Abstract: The present invention relates to an extended gate field effect transistor (EGFET) with a phosphate selective alloy membrane (80) that has a high sensitivity towards phosphate ions in a solution and improves corrosion rate. The phosphate selective alloy membrane (80) can be made of a binary, ternary, quaternary, or quinary alloy. The EGFET also includes feature such as an extended gate metallisation layer (60) made of a metallic or a non-metallic conductor, which enables the phosphate selective alloy membrane (80) to be separated from the FET wafer of the EGFET. A method for fabricating said EGFET is also disclosed in the present invention. In order to ensure the reliability and accuracy of the EGFET phosphate sensor device when sensing phosphate ions in the solution, and preventing any chemical components from leaching away and further damaging the sensor device, the method emphasises on the steps of depositing the extended gate metallisation layer (60) on the gate terminal (50); depositing the phosphate selective alloy membrane (80) in sensing pad area so that the phosphate selective alloy membrane (80) is in contact with the solution; and creating an epoxy dam (90) for controlling the exposure of the phosphate selective alloy membrane (80) to target analyte in the solution.

    Abstract translation: 本发明涉及一种具有磷酸盐选择性合金膜(80)的扩展栅场效应晶体管(EGFET),其对溶液中的磷酸根离子具有高灵敏度,并提高腐蚀速率。 磷酸盐选择性合金膜(80)可以由二元,三元,四元或五元合金制成。 EGFET还包括诸如由金属或非金属导体制成的延伸栅极金属化层(60)的特征,其使磷酸盐选择性合金膜(80)能够与EGFET的FET晶片分离。 本发明还公开了一种制造所述EGFET的方法。 为了确保EGFET磷酸盐传感器设备在检测溶液中的磷酸根离子时的可靠性和准确性,并且防止任何化学成分脱落并进一步破坏传感器装置,该方法强调了沉积扩展栅极金属化层 (60)在所述栅极端子(50)上; 在所述磷酸盐选择性合金膜(80)与所述溶液接触的情况下,将所述磷酸盐选择性合金膜(80)沉积在感测焊盘区域中; 以及创建用于控制所述磷酸盐选择合金膜(80)暴露于所述溶液中的目标分析物的环氧树脂坝(90)。

    APPARATUS AND METHOD FOR ELECTRICALLY TESTING A GAS SENSING ELEMENT
    4.
    发明申请
    APPARATUS AND METHOD FOR ELECTRICALLY TESTING A GAS SENSING ELEMENT 审中-公开
    用于电气测试气体传感元件的装置和方法

    公开(公告)号:WO2013048232A1

    公开(公告)日:2013-04-04

    申请号:PCT/MY2012/000194

    申请日:2012-06-29

    CPC classification number: G01N27/20 H01L22/14 H01L2924/0002 H01L2924/00

    Abstract: Apparatus for characterizing a sensing element which comprises of at least one gas chamber (301), at least one gas connection means, at least two electrical connection means (306), at least one heater (309), at least one sealing means (310) and at least one locking means. The characterization process of said sensing element can be carried out at wafer level through resistance measurement, whereby said sensing element can be a blanket sensing element before proceed to fabricating of full sensor device. The connection means comprises at least one spring in connection with an electrode for improved contacting of the workpiece.

    Abstract translation: 用于表征感测元件的装置,其包括至少一个气室(301),至少一个气体连接装置,至少两个电连接装置(306),至少一个加热器(309),至少一个密封装置 )和至少一个锁定装置。 所述感测元件的表征过程可以通过电阻测量在晶片级进行,由此在继续制造完整的传感器装置之前,所述感测元件可以是橡皮圈感测元件。 连接装置包括至少一个与电极连接的弹簧,用于改善工件的接触。

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