Abstract:
A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.
Abstract:
The present invention relates to an extended gate field effect transistor (EGFET) with a phosphate selective alloy membrane (80) that has a high sensitivity towards phosphate ions in a solution and improves corrosion rate. The phosphate selective alloy membrane (80) can be made of a binary, ternary, quaternary, or quinary alloy. The EGFET also includes feature such as an extended gate metallisation layer (60) made of a metallic or a non-metallic conductor, which enables the phosphate selective alloy membrane (80) to be separated from the FET wafer of the EGFET. A method for fabricating said EGFET is also disclosed in the present invention. In order to ensure the reliability and accuracy of the EGFET phosphate sensor device when sensing phosphate ions in the solution, and preventing any chemical components from leaching away and further damaging the sensor device, the method emphasises on the steps of depositing the extended gate metallisation layer (60) on the gate terminal (50); depositing the phosphate selective alloy membrane (80) in sensing pad area so that the phosphate selective alloy membrane (80) is in contact with the solution; and creating an epoxy dam (90) for controlling the exposure of the phosphate selective alloy membrane (80) to target analyte in the solution.
Abstract:
Apparatus for characterizing a sensing element which comprises of at least one gas chamber (301), at least one gas connection means, at least two electrical connection means (306), at least one heater (309), at least one sealing means (310) and at least one locking means. The characterization process of said sensing element can be carried out at wafer level through resistance measurement, whereby said sensing element can be a blanket sensing element before proceed to fabricating of full sensor device. The connection means comprises at least one spring in connection with an electrode for improved contacting of the workpiece.