公开(公告)号：WO2016032314A1

公开(公告)日：2016-03-03

申请号：PCT/MY2015/000069

申请日：2015-08-14

Applicant: MIMOS BERHAD

Inventor： ENDUT, Zulkarnain ,  ABDULLAH, Ali Zaini ,  SYONO, Mohd Ismahadi ,  EMBONG, Saat Shukri

IPC: G01N27/414

CPC classification number: G01N27/414

Abstract: The present invention relates to an extended gate field effect transistor (EGFET) with a phosphate selective alloy membrane (80) that has a high sensitivity towards phosphate ions in a solution and improves corrosion rate. The phosphate selective alloy membrane (80) can be made of a binary, ternary, quaternary, or quinary alloy. The EGFET also includes feature such as an extended gate metallisation layer (60) made of a metallic or a non-metallic conductor, which enables the phosphate selective alloy membrane (80) to be separated from the FET wafer of the EGFET. A method for fabricating said EGFET is also disclosed in the present invention. In order to ensure the reliability and accuracy of the EGFET phosphate sensor device when sensing phosphate ions in the solution, and preventing any chemical components from leaching away and further damaging the sensor device, the method emphasises on the steps of depositing the extended gate metallisation layer (60) on the gate terminal (50); depositing the phosphate selective alloy membrane (80) in sensing pad area so that the phosphate selective alloy membrane (80) is in contact with the solution; and creating an epoxy dam (90) for controlling the exposure of the phosphate selective alloy membrane (80) to target analyte in the solution.

Abstract translation: 本发明涉及一种具有磷酸盐选择性合金膜（80）的扩展栅场效应晶体管（EGFET），其对溶液中的磷酸根离子具有高灵敏度，并提高腐蚀速率。 磷酸盐选择性合金膜（80）可以由二元，三元，四元或五元合金制成。 EGFET还包括诸如由金属或非金属导体制成的延伸栅极金属化层（60）的特征，其使磷酸盐选择性合金膜（80）能够与EGFET的FET晶片分离。 本发明还公开了一种制造所述EGFET的方法。 为了确保EGFET磷酸盐传感器设备在检测溶液中的磷酸根离子时的可靠性和准确性，并且防止任何化学成分脱落并进一步破坏传感器装置，该方法强调了沉积扩展栅极金属化层 （60）在所述栅极端子（50）上; 在所述磷酸盐选择性合金膜（80）与所述溶液接触的情况下，将所述磷酸盐选择性合金膜（80）沉积在感测焊盘区域中; 以及创建用于控制所述磷酸盐选择合金膜（80）暴露于所述溶液中的目标分析物的环氧树脂坝（90）。