公开(公告)号：MY185098A

公开(公告)日：2021-04-30

申请号：MYPI2014002536

申请日：2014-08-29

Applicant: MIMOS BERHAD

Inventor： MOHD ROFEI MAT HUSSIN ,  SHARAIFAH KAMARIAH WAN SABLI ,  ISKHANDAR MOHD NASIR

Abstract: The present invention relates to a method for manufacturing a large Schottky diode. Thme present invention comprising: depositing a contact etch stop layer (CESL) on top of the gate oxide and trench array structure (600); depositing (700) and planarizing (800) a pre-metal dielectric to produce flat topography on the top surface; patterning (900) and etching (1000, 1100) the dielectric layers using plasma etch method; and conducting wet etching to remove the dielectric layer completely from contact area (1200). The present invention provides a robust fabrication method of producing a large area of trench Schottky diode with better protection to the trench guard ring structure. The structure of the diode technically directly affects the reverse leakage current of the diode. Due to that, it is important to produce the diode without structure damage at guard ring area in order to reduce and stabilize reverse leakage current.