公开(公告)号：MY185098A

公开(公告)日：2021-04-30

申请号：MYPI2014002536

申请日：2014-08-29

Applicant: MIMOS BERHAD

Inventor： MOHD ROFEI MAT HUSSIN ,  SHARAIFAH KAMARIAH WAN SABLI ,  ISKHANDAR MOHD NASIR

Abstract: The present invention relates to a method for manufacturing a large Schottky diode. Thme present invention comprising: depositing a contact etch stop layer (CESL) on top of the gate oxide and trench array structure (600); depositing (700) and planarizing (800) a pre-metal dielectric to produce flat topography on the top surface; patterning (900) and etching (1000, 1100) the dielectric layers using plasma etch method; and conducting wet etching to remove the dielectric layer completely from contact area (1200). The present invention provides a robust fabrication method of producing a large area of trench Schottky diode with better protection to the trench guard ring structure. The structure of the diode technically directly affects the reverse leakage current of the diode. Due to that, it is important to produce the diode without structure damage at guard ring area in order to reduce and stabilize reverse leakage current.

公开(公告)号：MY186247A

公开(公告)日：2021-06-30

申请号：MYUI2012005558

申请日：2012-12-21

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  MOHD ROFEI MAT HUSSIN ,  NASIMAH SAIDIN ,  WAN AZLI WAN ISMAIL ,  MOHD ISMAHADI SYONO

Abstract: The present invention relates to a multigate electrode ion sensitive filed effect transistor comprising: a semiconductor substrate (101); a channel region (103) having doped polysilicon layer (104) of at least 5e16 per cubic centimeter for conducting the current, formed over the semiconductor substrate (101); a drain region (105); a source region (107), wherein the channel region (103) is stacked between the source region (107) and the drain region (105); a gate insulating layer (109); and a sensing membrane layer (111); characterized in that the gate insulating layer (109) and the sensing membrane layer (111) are formed covering planar surfaces and the stack structure of the channel region (103), the source region (107) and the drain region (105) to create multigate electrodes.

公开(公告)号：WO2009045090A3

公开(公告)日：2009-06-04

申请号：PCT/MY2008000109

申请日：2008-09-29

Applicant: MIMOS BERHAD ,  MOHD ISMAHADI BIN SYONO ,  ROZINA BINTI ABDUL RANI ,  MOHD ROFEI MAT HUSSIN

Inventor： MOHD ISMAHADI BIN SYONO ,  ROZINA BINTI ABDUL RANI ,  MOHD ROFEI MAT HUSSIN

IPC: G01F1/68

CPC classification number: G01F1/20

Abstract: The present invention relates to an integrated thermally compensated pH EGFET used as a flow rate sensor characterized in that wherein the integrated thermally compensated pH EGFET comprises of at least three EGFETs are combined to create at least two sensors that can detect thermally compensated pH of a solution and its flow rate simultaneously and wherein said sensors are used to form thermally compensated pH sensor by creating a sensing electrode sensitive to H+ ions such as nitride and an insensitive one such as oxide and wherein both are exposed to the same solution thereby experiencing the same temperature and pH change.

Abstract translation: 本发明涉及一种用作流量传感器的综合热补偿pH EGFET，其特征在于，其中组合至少三个EGFET的积分热补偿pH EGFET组合，以产生至少两个可检测溶液热补偿pH的传感器 并且其中所述传感器用于通过产生对H +离子敏感的感测电极来形成热补偿的pH传感器，例如氮化物和不敏感的诸如氧化物，并且其中两者暴露于相同的溶液，从而经历相同的温度 和pH变化。