公开(公告)号：WO2015178755A1

公开(公告)日：2015-11-26

申请号：PCT/MY2015/000033

申请日：2015-05-13

Applicant: MIMOS BERHAD

Inventor： BIEN, Daniel Chia Sheng ,  ABD WAHID, Khairul Anuar ,  MOHAMMAD HANIFF, Muhammad Aniq Shazni ,  LEE, Mai Woon

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: Disclosed herein is an ion-sensitive field-effect transistor (ISFET) (100) having nanostructures (109) for sensing ions and measuring ion concentration in solutions. In general, the base layer (101) at the sensing region of the ISFET (100) is etched to form the nanostructures (109). Each of the nanostructures (109) has a diameter of less than 100nm, and the nanostructures (109) have a distance of less than 100nm from each other. The nanostructures (109) are nanopillars with cylindrical shape, needle-like shape, or a combination thereof. Due to all these particular features, the surface area of the ISFET (100) that is exposed to ions is increased, and therefore the sensitivity and efficiency of the ISFET (100) are improved. Also disclosed herein is a fabrication method thereof.

Abstract translation: 本文公开了具有用于感测离子和测量溶液中的离子浓度的纳米结构（109）的离子敏感场效应晶体管（ISFET）（100）。 通常，在ISFET（100）的感测区域处的基底层（101）被蚀刻以形成纳米结构（109）。 每个纳米结构（109）具有小于100nm的直径，并且纳米结构（109）彼此之间的距离小于100nm。 纳米结构（109）是具有圆柱形，针状或其组合的纳米柱。 由于所有这些特定的特征，暴露于离子的ISFET（100）的表面积增加，因此提高了ISFET（100）的灵敏度和效率。 这里也公开了其制造方法。

公开(公告)号：WO2020139077A1

公开(公告)日：2020-07-02

申请号：PCT/MY2019/050132

申请日：2019-12-26

Applicant: MIMOS BERHAD

Inventor： LEE, Hing Wah ,  LEE, Mai Woon ,  BIN MOHAMMAD HANIFF, Muhammad Aniq Shazni ,  BINTI SORIADI, Nurhidaya ,  BIN ADOM, Abdul Halim

IPC: H01L21/02

Abstract: The present invention relates to a method (200) of forming graphene bump structure (100) comprising the steps of providing (210) a substrate (10); etching (220) the substrate (10) to form a cavity structure (20); growing (230) a silicon dioxide layer (30) on top of the substrate (10); depositing (240) a thin metal catalyst layer (40) on top of the substrate (30); synthesizing (250) graphene layer (50) on top of the metal catalyst layer (40); depositing (260) an epoxy-based photoresist (60); removing (270) the thin metal catalyst layer (40), the silicon dioxide layer (30) and the epoxy-based photoresist (60) from the substrate (10); and patterning (280) the epoxy-based photoresist (60) to remove from the cavity structure (20) to form the graphene bump structure (100).

公开(公告)号：WO2021133159A1

公开(公告)日：2021-07-01

申请号：PCT/MY2020/050133

申请日：2020-11-05

Applicant: MIMOS BERHAD

Inventor： LEE, Mai Woon ,  LEE, Hing Wah ,  SORIADI, Nurhidaya ,  ADOM, Abdul Halim

IPC: H01L21/205 ,  C01B32/186

Abstract: The present invention relates to a method (100) of forming graphene nanomesh comprising the steps of providing an oxide layer on top of the substrate (101) as an insulating layer, depositing a metal seed layer on a substrate (102) via physical vapor deposition technique; and growing a graphene layer on the metal seed layer (103) via chemical vapor deposition, whereby said graphene layer grows into the graphene nanomesh on the metal seed layer. The method (100) further comprising a step of transferring the graphene nanomesh to another substrate (104).