公开(公告)号：MY181509A

公开(公告)日：2020-12-24

申请号：MYUI2013004369

申请日：2013-12-04

Applicant: MIMOS BERHAD

Inventor： MOHD ROFEI BIN MAT HUSSIN ,  SHARAIFAH KAMARIAH BT WAN SABL

Abstract: The present invention relates method for producing a reduced reverse leakage current Schottky diode. The method for reducing the leakage current is incorporated in the method for producing the diode. The method for reducing leakage current further comprising: forming a polysilicon recess after the step of forming the pre-metal dielectric layer (1000); conducting chemical cleaning to remove unreacted metallic layer on the gate oxide (2000) after the step of forming metal silicide layer (500); and conducting second thermal rapid annealing (3000) after removing the unreacted metallic layer on the gate oxide. Most illustrative figure is Figure 1.