公开(公告)号：JP2001210848A

公开(公告)日：2001-08-03

申请号：JP2000019111

申请日：2000-01-27

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  KIMOTO KEISUKE ,  KAI HIDEYOSHI

IPC: H01L31/042

Abstract: PROBLEM TO BE SOLVED: To obtain a solar battery for which the electrode of a spheric semiconductor core section can be formed with high productivity by a new continuous means and the light receiving surface of which can be increased by reducing the shaving amount of the spheric semiconductor of the core section and a method of manufacturing the solar battery by which the solar battery can be manufactured and modularized smoothly. SOLUTION: The solar battery 10 provided with a spheric substrate 1 having a first-conductivity semiconductor carrying a second-conductivity semiconductor on its surface in a core section is constituted in such a way that a through hole 4 is bored through the substrate 1 and an electrode metal 5 is inserted into the hole 4 in a spitting state. Then the metal 5 is bonded to the substrate 1 by forming an alloy layer between the metal 5 and substrate 1 by sintering and a first-conductivity electrode 6 is formed of the protruded part of the metal 5 from the substrate 1.

公开(公告)号：JP2007103975A

公开(公告)日：2007-04-19

申请号：JP2007009960

申请日：2007-01-19

Applicant: Clean Venture 21:Kk ,  Mitsui High Tec Inc ,  株式会社クリーンベンチャー二十一 ,  株式会社三井ハイテック

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE

IPC: H01L31/04

CPC classification number: Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide a solar cell with high sticking tendency between a substrate and a spherical cell, and with high reliability, in which processes for an inner electrode formation, an outer electrode formation, and an insulating layer formation between both the electrodes of the solar cell can be manufactured in a single process. SOLUTION: The solar cell includes a substrate 17 configured by a three layered structure composed of a first conductive layer 17a, an insulating layer 17b, and a second conductive layer 17c that is the uppermost layer; on the surface thereof, a recess 17d is provided so as to be formed along a shape of a spherical cell 10; and in the recess 17d, the spherical cell 10 composed of a first conductivity-type semiconductor layer formed inside and a second conductivity type semiconductor layer formed on the surface is provided. The inner electrode is formed by electrically connecting the first conductivity-type semiconductor layer of the spherical cell 10 to the first conductive layer of the substrate 17. The outer electrode is formed by electrically connecting the second conductivity type semiconductor layer of the spherical cell 10 to the second conductive layer of the substrate 17. The recess 17d is provided with a recessed surface whose curvature is more mild than that of the surface of the spherical cell 10, thereby having a gap between the recessed surface and the surface of the spherical cell 10. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供在基板和球形单元之间具有高粘着倾向的太阳能电池，并且具有高可靠性，其中内部电极形成，外部电极形成和绝缘层形成过程 太阳能电池的电极都可以在单个工艺中制造。 解决方案：太阳能电池包括由第一导电层17a，绝缘层17b和作为最上层的第二导电层17c构成的三层结构构成的基板17; 在其表面上设置有沿着球形电池10的形状形成的凹部17d; 并且在凹部17d中，设置由内部形成的第一导电型半导体层和形成在表面上的第二导电型半导体层构成的球形电池10。 内电极通过将球形电池10的第一导电型半导体层与衬底17的第一导电层电连接而形成。外电极通过将球形电池10的第二导电类型半导体层电连接到 基板17的第二导电层。凹部17d设置有凹部表面，该凹面的曲率比球形电池10的表面更弯曲，从而在凹部表面与球形电池10的表面之间具有间隙 。版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2010192695A

公开(公告)日：2010-09-02

申请号：JP2009035662

申请日：2009-02-18

Applicant: Mitsui High Tec Inc ,  株式会社三井ハイテック

Inventor： SHIMIZU KOJI ,  NARIMATSU HIROAKI ,  KAI HIDEYOSHI

IPC: H01L23/50

CPC classification number: H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide methods of manufacturing a semiconductor device and a lead frame of the semiconductor device, in which any plating burr generated by etching remains neither in the lead frame used as a product nor in the semiconductor device.
SOLUTION: The method is provided for manufacturing a semiconductor device 12 every unit lead frame region 10 in a lead frame raw material 11 in which a plurality of unit lead frame regions 10 are arranged at multiple columns or a single column, wherein after carrying out half etching of the lead frame raw material 11 from a front side thereof by using a first plating layer 24 as a resist film, there are provided an outer frame removal step of removing an outer frame edge of the lead frame raw material 11 with a plating burr 37 by press working, and a pilot hole formation step of forming pilot holes 29 in a region except the unit lead frame regions 10 of the lead frame raw material 11 by press working.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供制造半导体器件的半导体器件和引线框架的方法，其中由蚀刻产生的任何电镀毛刺都不在用作产品的引线框架中，也不在半导体器件中。 解决方案：该方法用于在引线框架原料11中的每个单元引线框区域10上制造半导体器件12，其中多个单元引线框架区域10布置在多个列或单个列，其中， 通过使用第一镀层24作为抗蚀剂膜，从其前侧对引线框架原料11进行半蚀刻，提供了一种外框除去步骤，用于除去引线框架原料11的外框边缘， 通过冲压加工的电镀毛刺37，以及通过冲压加工在引线框架原料11的单位引线框架区域10之外的区域中形成引导孔29的引导孔形成步骤。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2001338898A

公开(公告)日：2001-12-07

申请号：JP2000159065

申请日：2000-05-29

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE ,  IRIE JUNICHI

IPC: B28D5/04 ,  H01L21/304 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having an easy manufacture and high reliability by improving its yield and to provide a semiconductor device having high reliability without needing a special manufacturing apparatus. SOLUTION: A method for cutting sphere comprises the steps of inserting the sphere such as a solar cell or the like into a groove of a V-shaped section formed to insert the sphere to be cut, accurately fixing the sphere together with a resin in the groove, and splitting the sphere into hemispheres by a cutting blade in a fixed state.

公开(公告)号：JPH1174329A

公开(公告)日：1999-03-16

申请号：JP23746697

申请日：1997-09-02

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  AMANO KATSUMI ,  KAI HIDEYOSHI ,  HIGUCHI AKIKAZU

IPC: B65G49/00 ,  B65G47/86 ,  H01L21/02 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To prevent an atmosphere converted between previous and subsequent processes from leaking, by providing a receiving path and a feeding path of a spherical object to be processed on a supporting device, providing an atmosphere exhaust tube connected to a storage chamber of the object of a rotary hermetic distribution, and providing an atmosphere supply tube connected to the storage chamber on a side for feeding the object. SOLUTION: A rotary hermetic distributor 1 is rotated, and when a position of a storage chamber 4 aligns with a position of an object supply path 14 for processing and an atmosphere exhaust path 18, an object 3 is received for processing from a receiving path 12 into the storage chamber 4, and an atmosphere in the storage chamber 4 is pumped toward an atmosphere exhaust tube 16 to leave no atmosphere of a previous process. On the other hand, when the position of the storage chamber 14 aligns with a position of a processed object transfer path 15 and an atmosphere supply tube 17, gas or the like to be used in a next process is blown from the supply tube 17 from an atmosphere supply path 19 into the storage chamber 14. At the same time, the processed object 3 in the storage chamber 14 is fed from the transfer path 15 to a feeding path 13. Thus, sealability for the atmosphere can be improved without the atmosphere used in the previous process mixed.

公开(公告)号：JPH1159899A

公开(公告)日：1999-03-02

申请号：JP22411697

申请日：1997-08-20

Applicant: MITSUI HIGH TEC

Inventor： KAI HIDEYOSHI

IPC: B65G53/04 ,  B65G47/14 ,  B65G51/02 ,  B65G53/16 ,  B65G53/42 ,  B65G65/40 ,  H01L21/677

Abstract: PROBLEM TO BE SOLVED: To provide a supply device for a spherical object whereby in the case of supplying the spherical object from a storage vessel of hopper or the like to the next processing or manufacturing process, this spherical object can be surely smoothly supplied one by one. SOLUTION: A supply device 1 for a spherical object is constituted by a supply pipe line 8 connected to a storage vessel 2 of the spherical object, branch pipe line 9 branching from the supply pipe line 8, and a fluid supplier 10 introducing a pressure fluid in the branch pipe line 9. By the pressure fluid injected in the supply pipe line 8 through the branch pipe line 9, the spherical object is conveyed.

公开(公告)号：JP2002134766A

公开(公告)日：2002-05-10

申请号：JP2000324427

申请日：2000-10-24

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a solar cell, in which the number of production steps, workability, reliability and photoelectric conversion efficiency can be improved, and to provide a solar cell. SOLUTION: The method for producing a solar cell, using a spherical cell 10 having a second conductivity-type semiconductor layer 12 formed on the surface of a spherical substrate having a first conductivity-type semiconductor layer 11, comprises a step of laying an elastic body under a first conductive layer 13 serving as a part of a sheet-like substrate 17 and making a hole which penetrates the first conductive layer 13 but not penetrating the elastic body, a step of mounting the spherical cell 10 in the hole and pressing it to form a recess in the substrate, a step for stripping the elastic body, a step of exposing the first conductive semiconductor layer 11 of the spherical cell 10 on the rear side of the light-receiving face of the first conductive layer 13, a step for forming the insulation layer 14 of the substrate on the rear side, except the exposed part, and a step of forming the second conductive layer 15 of the substrate under the insulation layer 14, such that it is not short-circuited electrically with the first conductive layer 13 but is connected electrically with the exposed first conductivity-type semiconductor layer 11.

公开(公告)号：JP2002100792A

公开(公告)日：2002-04-05

申请号：JP2000288020

申请日：2000-09-22

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE

IPC: H01L31/04 ,  H01L31/042

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method and a solar battery, which is low-cost and simple, and has superior light reception efficiency. SOLUTION: The manufacturing method for the solar battery, using a spherical cell obtained by forming a 2nd conductivity-type semiconductor layer on a spherical body substrate surface, having a 1st conductivity-type semiconductor layer has a stage where the spherical cell is embedded, so that almost half of it is exposed on the surface of thermoplastic resin on a metal plat; the 2nd conductivity-type semiconductor layer on the surface of the spherical cell which is not covered with the thermoplastic resin is removed; and a 1st conductive member is applied in contact with the 1st conductivity-type semiconductor layer exposed on the surface of the cell, with a stage where the spherical cell is mounted on the metal sheet and pressed, with a stage where the thermoplastic resin is removed, with a stage where the metal plate is removed and insulating resin is applied and hardened covering the top of the metal sheet and the reverse of the spherical cell, and with stage where a transparent conductive film is formed so as to cover the spherical cell and insulating resin.

公开(公告)号：JP2002050780A

公开(公告)日：2002-02-15

申请号：JP2000235296

申请日：2000-08-03

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing solar cell which can clear the process for formation of the inner electrode of the solar cell, formation of the outer electrode, and formation of an insulating layer between both electrodes with a single process, and is satisfactory in adhesion between a substrate and a spherical cell and high in reliability, and to provide the solar cell. SOLUTION: This manufacturing process includes a process of preparing a substrate 17, where circular processing is applied to expose the two layers inside a three-layered structure, consisting of the first conductive layer 17a, an insulating layer 17b, and the second conductive layer 17c; a process of preparing a spherical cell 10 which is constituted by forming a second conductivity-type semiconductor layer 11, such that one part of a first conductivity-type semiconductor layer 11 is exposed, on the surface of the spherical substrate having the first conductivity-type semiconductor layer 11; and a process of electrically connecting the exposed section of the first conductivity-type semiconductor layer 11 with the first conductive layer 17a and electrically connecting a second conductivity-type semiconductor layer 12 with the second conductive layer 17c, and forming a recess 17d such that the substrate 17 is moved along the spherical cell 10 by placing the spherical cell 10, so that the section where the first conductivity-type semiconductor layer 11 is exposed of the spherical cell 10 abuts against the section, where circular processing is applied such that the two layers within the substrate 17 is exposed.

公开(公告)号：JP2001261153A

公开(公告)日：2001-09-26

申请号：JP2000083710

申请日：2000-03-24

Applicant: MITSUI HIGH TEC

Inventor： KAI HIDEYOSHI

IPC: B65G51/02 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a carrier and a carrying method for granular matter capable of stably carrying the granular matter over a long distance in a non- contact state without requiring a complicated mechanism, equalizing a diameter of a carrier passage, and effectively changing an atmosphere. SOLUTION: This carrier for the granular matter B has the pipe-like flow passage 9 allowing carriage of the granular matter B by a carrier fluid, and a fluid confluence passage 7 joining the carrier fluid to the flow passage 9 to the carrying direction of the granular matter B. The flow passage 9 has a fluid discharge part 12 discharging a part of the fluid inside the flow passage 9 outside the flow passage 9 near a confluence part of the fluid confluence passage 7 on the downstream side of the confluence part. The internal diameter of the flow passage 9 is constant from the carrying-in side to the carrying-out side of the granular matter B.