公开(公告)号：CA2037912A1

公开(公告)日：1991-02-08

申请号：CA2037912

申请日：1990-05-10

Applicant: MITSUI TOATSU CHEMICALS

Inventor： NAKAJIMA SHIGEAKI ,  WAKI HIROSHI ,  FUKUDA NOBUHIRO ,  HYAKUTAKE HIROYUKI ,  KIKUZAWA MASANAGA

IPC: H01C7/02

Abstract: A positive coefficient thin-film thermistor which comprises a thin film exhibiting a PTC characteristic and having a thickness of 0.005 to 5 .mu. m and electrodes as constituting elements, and wherein the thin film is composed of a barium titanate based composition and the PTC characteristic is represented by a resistnace variation in transition region of 1 - 10 orders of magnitude and a maximum resistance temperature variation rate of 1 - 20 order/ .degree.C.

公开(公告)号：DE69021708D1

公开(公告)日：1995-09-21

申请号：DE69021708

申请日：1990-05-10

Applicant: MITSUI TOATSU CHEMICALS

Inventor： NAKAJIMA SHIGEAKI ,  WAKI HIROSHI ,  FUKUDA NOBUHIRO ,  HYAKUTAKE HIROYUKI ,  KIKUZAWA MASANAGA

IPC: H01C7/02

Abstract: Thin-film thermistor having positive characteristics, exhibits the PTC characteristics and is composed of an electrode and a thin film of a thickness of 0.005 to 5 microns. The thin film is one made of a barium titanate compsn. The PTC characteristics are such that the change of the resistance ranges from one to ten figures in a transition region, and the rate of resistance change with temp. ranges from one to twenty figures per degreeC. @(22pp Dwg.No.2/4)@.

公开(公告)号：DE69021708T2

公开(公告)日：1996-03-21

申请号：DE69021708

申请日：1990-05-10

Applicant: MITSUI TOATSU CHEMICALS

Inventor： NAKAJIMA SHIGEAKI ,  WAKI HIROSHI ,  FUKUDA NOBUHIRO ,  HYAKUTAKE HIROYUKI ,  KIKUZAWA MASANAGA

IPC: H01C7/02

Abstract: Thin-film thermistor having positive characteristics, exhibits the PTC characteristics and is composed of an electrode and a thin film of a thickness of 0.005 to 5 microns. The thin film is one made of a barium titanate compsn. The PTC characteristics are such that the change of the resistance ranges from one to ten figures in a transition region, and the rate of resistance change with temp. ranges from one to twenty figures per degreeC. @(22pp Dwg.No.2/4)@.

公开(公告)号：JPH02129901A

公开(公告)日：1990-05-18

申请号：JP28251288

申请日：1988-11-10

Applicant: MITSUI TOATSU CHEMICALS

Inventor： WAKI HIROSHI ,  FUKUDA NOBUHIRO ,  NAKAJIMA SHIGEMASA ,  KIKUZAWA MASANAGA

IPC: H01C7/02

Abstract: PURPOSE:To realize a compact element without requiring a large area by forming an electrode on one or both sides of a flat supporting substrate and by applying and forming a barium titanate composition thin film to the one side. CONSTITUTION:An Ni layer 2 is formed on one or both sides of an n-Si substrate 1 through electroless plating, EB deposition, ion plating, etc., and Au or Pt 3 is deposited thereon to secure an ohmic contact. Metal alkoxide solution which is adjusted to a specified concentration is dropped to one side of the substrate 1. A thin film containing an element which constitutes barium titanate composition such as Ti, Ba, Sr is formed through a spin coat method, etc., and a ceramic semiconductor of a barium titanate composition thin film 4 is acquired by firing it. An electrode 5 such as Ni, Au, Pt is formed thereon through a similar means. A small-sized element can be thereby acquired without requiring a large area.