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    CIRCUIT BOARD FOR OPTICAL DEVICES.
    1.
    发明公开
    CIRCUIT BOARD FOR OPTICAL DEVICES. 失效
    光电设备电路板。

    公开(公告)号：EP0619608A3

    公开(公告)日：1994-10-19

    申请号：EP94302461

    申请日：1994-04-07

    Applicant: MITSUI TOATSU CHEMICALS ,  MITSUI TOATSU CHEMICALS

    Inventor： TAKASE MITSUO ,  FUKUDA NOBUHIRO ,  DODO TOSHIHIRO

    IPC: H01L25/04 ,  H01L25/075 ,  H01L31/0216

    CPC classification number: H01L25/042 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A circuit board for mounting one or more optical devices such as light receiving LSI chips and light emitting LSI chips. The circuit board has a flexible transparent substrate (1) a window portion (7) which is formed as a slit-like transparent region of the transparent substrate, a plurality of electrodes (2) for bonding the optical devices thereon provided on one surface of the substrate, a plurality of aggregated electrodes (3) provided on the other surface on a region corresponding to the electrodes in a manner extending respectively in the longitudinal direction of the window portion (7) and electrical connection portions (26) penetrating the substrate. Each of the aggregated electrodes (3) is electrically connected with two or more of the electrodes through the electrical connection portion. The circuit board will be used in, for example, an optical reader, an optical printer or the like in such a manner that the light which is coming in and/or going out of the optical device is transmitted through the window portion.

    Abstract translation: 一种用于安装诸如光接收LSI芯片和发光LSI芯片的一个或多个光学装置的电路板。 电路板具有柔性透明基板（1）形成为透明基板的狭缝状透明区域的窗口部（7），多个电极（2），用于将其上设置的光学元件 所述基板，在与所述电极对应的区域上的另一个表面上分别设置在所述窗口部分（7）的纵向方向上延伸的方式和穿过所述基板的电连接部分（26）的多个聚集电极（3）。 每个聚集电极（3）通过电连接部分与两个或更多个电极电连接。 电路板将被使用在例如光学读取器，光学打印机等中，使得进入和/或离开光学装置的光通过窗口部分传输。

    3.
    发明专利
    未知

    公开(公告)号：DE69013965T2

    公开(公告)日：1995-05-18

    申请号：DE69013965

    申请日：1990-04-17

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

    IPC: C23C16/24 ,  C23C16/517 ,  C23C16/50

    Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

    7.
    发明专利
    未知

    公开(公告)号：DE69021708T2

    公开(公告)日：1996-03-21

    申请号：DE69021708

    申请日：1990-05-10

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： NAKAJIMA SHIGEAKI ,  WAKI HIROSHI ,  FUKUDA NOBUHIRO ,  HYAKUTAKE HIROYUKI ,  KIKUZAWA MASANAGA

    IPC: H01C7/02

    Abstract: Thin-film thermistor having positive characteristics, exhibits the PTC characteristics and is composed of an electrode and a thin film of a thickness of 0.005 to 5 microns. The thin film is one made of a barium titanate compsn. The PTC characteristics are such that the change of the resistance ranges from one to ten figures in a transition region, and the rate of resistance change with temp. ranges from one to twenty figures per degreeC. @(22pp Dwg.No.2/4)@.

    Process for producing goethite
    8.
    发明专利
    Process for producing goethite 未知

    公开(公告)号：DE3246752A1

    公开(公告)日：1984-06-20

    申请号：DE3246752

    申请日：1982-12-17

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： MATSUNAGA MITSUROU ,  MORITA ISAMU ,  FUKUDA NOBUHIRO

    IPC: C01G49/02 ,  C01G49/06 ,  G11B5/706 ,  H01F1/11

    Abstract: Process for producing goethite having an axial ratio of at least 7 and a specific surface area of 20-80 m /g, which is suitable for use in the production of alpha -iron powder, wherein an oxidising gas is intermittently introduced into a suspension of iron(II) hydroxide which has been obtained by reacting an iron(II) salt with an alkali metal hydroxide, the oxidation rate of iron(II) hydroxide being preferably controlled at less than 7% for each feed/feed stop cycle of the oxidising gas and, moreover, the duration of feeding the oxidising gas being selected to be inside 10 minutes and equal to or shorter than one quarter of the duration of the interruption of feeding in each of the individual feed/feed stop cycles of the oxidising gas.

    10.
    发明专利
    未知

    公开(公告)号：DE69314721D1

    公开(公告)日：1997-11-27

    申请号：DE69314721

    申请日：1993-08-03

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： TAKASE MITSUO ,  FUKUDA NOBUHIRO ,  DODO TOSHIHIRO ,  FUKUDA SHIN

    IPC: B32B17/10 ,  B60S1/02 ,  H05B3/84 ,  H05B3/86 ,  H05B3/28 ,  H05B3/06

    Abstract: A transparent panel heater which can be used for heating a window portion of liquid crystal displays, refrigerated showcases, freezed showcases, defrosters of windshields, and the like. The panel heater has a transparent substrate, a transparent conductive film formed on the substrate, a substantially light-transmittable metallic thin layer formed on the conductive film and a pair of electrodes for electrifying the conductive film. The metallic thin layer is preferably deposited by a dry process such as a sputtering process, an ion plating method, various CVD methods, and the like. The electrodes are preferably formed on the metallic thin layer by a wet plating method.

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