公开(公告)号：SG49961A1

公开(公告)日：1998-06-15

申请号：SG1996010051

申请日：1996-06-13

Applicant: MITSUI TOATSU CHEMICALS

Inventor： NAKAJIMA AKEMI ,  TAKAHASHI KOICHI ,  YOSHIKAI MASAAKI ,  KOYAMA MASATO ,  DODO TOSHIHIRO ,  SAKAI YOSHIHIRO ,  HARADA YUICHIRO

IPC: H05B3/86 ,  H05B3/84 ,  B32B17/10 ,  B60S1/02

Abstract: A transparent heater panel (1) comprises a transparent substrate (2), a transparent conductive layer (3) formed on the transparent substrate (2), electrodes (5,5') formed on the transparent conductive layer (3) and a transparent protective layer (6) formed on the transparent conductive layer (3) except for portions reserved for the electrodes (5,5'). End faces of the transparent conductive layer (3) are anti-corrosion treated with a transparent protective plastic member (7) or an anticorrosive. The heater panel (1) has improved durability against pollutants, environmental durability, reliability and light transmission.

公开(公告)号：DE69013965T2

公开(公告)日：1995-05-18

申请号：DE69013965

申请日：1990-04-17

Applicant: MITSUI TOATSU CHEMICALS

Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

IPC: C23C16/24 ,  C23C16/517 ,  C23C16/50

Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

公开(公告)号：AU5361290A

公开(公告)日：1990-10-25

申请号：AU5361290

申请日：1990-04-17

Applicant: MITSUI TOATSU CHEMICALS

Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

IPC: C23C16/24 ,  C23C16/517 ,  H01L21/205 ,  H01L31/20

Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

公开(公告)号：CA2014540A1

公开(公告)日：1990-10-18

申请号：CA2014540

申请日：1990-04-12

Applicant: MITSUI TOATSU CHEMICALS

Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

IPC: C23C16/24 ,  C23C16/517 ,  C23C16/22 ,  C30B25/00 ,  H01L21/365 ,  C23C16/50

Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

公开(公告)号：DE69125554T2

公开(公告)日：1997-07-17

申请号：DE69125554

申请日：1991-09-04

Applicant: MITSUI TOATSU CHEMICALS

Inventor： MIYACHI KENJI ,  KOYAMA MASATO ,  ASHIDA YOSHINORI ,  FUKUKA NOBUHIRO

IPC: H01L31/075 ,  H01L31/20 ,  H01L31/0376

Abstract: A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order: the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of: (a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 ANGSTROM , and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.

公开(公告)号：DE69125554D1

公开(公告)日：1997-05-15

申请号：DE69125554

申请日：1991-09-04

Applicant: MITSUI TOATSU CHEMICALS

Inventor： MIYACHI KENJI ,  KOYAMA MASATO ,  ASHIDA YOSHINORI ,  FUKUKA NOBUHIRO

IPC: H01L31/075 ,  H01L31/20 ,  H01L31/0376

Abstract: A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order: the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of: (a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 ANGSTROM , and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.

公开(公告)号：DE69013965D1

公开(公告)日：1994-12-15

申请号：DE69013965

申请日：1990-04-17

Applicant: MITSUI TOATSU CHEMICALS

Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

IPC: C23C16/24 ,  C23C16/517 ,  C23C16/50

Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

公开(公告)号：CA2019923C

公开(公告)日：1993-12-14

申请号：CA2019923

申请日：1990-06-27

Applicant: MITSUI TOATSU CHEMICALS

Inventor： MIYACHI KENJI ,  FUKUDA NOBUHIRO ,  ASHIDA YOSHINORI ,  KOYAMA MASATO

IPC: C23C14/06 ,  C23C14/14 ,  C23C14/58 ,  C23C16/56 ,  H01L21/203 ,  H01L21/205 ,  H01L21/30 ,  H01L31/20 ,  H01L21/363

Abstract: A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

公开(公告)号：AU622310B2

公开(公告)日：1992-04-02

申请号：AU5361290

申请日：1990-04-17

Applicant: MITSUI TOATSU CHEMICALS

Inventor： ASHIDA YOSHINORI ,  KOYAMA MASATO ,  FUKUDA NOBUHIRO

IPC: C23C16/24 ,  C23C16/517 ,  C23C16/50 ,  H01L21/205 ,  H01L31/20

Abstract: A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D,.C. voltage to the electrode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

公开(公告)号：AU8354691A

公开(公告)日：1992-03-12

申请号：AU8354691

申请日：1991-09-02

Applicant: MITSUI TOATSU CHEMICALS

Inventor： MIYACHI KENJI ,  KOYAMA MASATO ,  ASHIDA YOSHINORI ,  FUKUDA NOBUHIRO

IPC: H01L31/075 ,  H01L31/20 ,  H01L21/02

Abstract: A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order: the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of: (a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 ANGSTROM , and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.